Bi2S3 and Sb2S3 nanoparticles
were prepared by microwave irradiation of single-source precursor
complexes in the presence of ethylene glycol as a coordinating solvent.
The as-synthesized nanoparticles were characterized by X-ray diffraction
(XRD), transmission electron microscopy (TEM), scanning electron microscopy
(SEM) coupled with energy-dispersive X-ray (EDX), photoluminescence
(PL), and UV–vis near-infrared (NIR) spectroscopy. Their electrochemical
potential was examined in [Fe(CN)]4–/[Fe(CN)]3– by cyclic and square wave voltammetry (CV and SWV)
and electrochemical impedance spectroscopy (EIS). GCEBi2S3 and GCESb2S3 exhibit promising
electrochemical performance and a higher specific capacitance of about
700–800 F/g in [Fe(CN)]4–/[Fe(CN)]3. Thin films of Bi2S3 and Sb2S3 were successfully incorporated in the fabrication of solar
cell devices. The fabricated device using Bi2S3 (under 100 mW/cm2) showed a power conversion efficiency
(PCE) of 0.39%, with a V
oc of 0.96 V,
a J
sc of 0.00228 mA/cm2, and
an FF of 44%. In addition, the device exhibits nonlinear current density–voltage
characteristics, indicating that Bi2S3 was experiencing
a Schottky contact. The Sb2S3-based solar cell
device showed no connection in the dark and under illumination. Therefore,
no efficiency was recorded for the device using Sb2S3, which indicated the ohmic nature of the film. This might
be due to the current leakage caused by poor coverage. The nanoparticles
were found to induce similar responses to the conventional semiconductor
nanomaterials in relation to photoelectrochemistry. The present study
indicates that Bi2S3 and Sb2S3 nanoparticles are promising semiconductor materials for developing
optoelectronic and electrochemical devices as the films experience
Schottky and Ohmic contacts.