Multiple gate NVM cells with improved Fowler–Nordheim tunneling program and erase performances

Gerardi, C.; Tripiciano, E.; Cinà, G.; Lombardo, S.; Garozzo, C.; Corso, D.; Betrò, G.; Pace, Calogero; Crupi, Felice

doi:10.1016/j.sse.2010.06.023

Cited by 2 publications

(2 citation statements)

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“…1 has already pointed how geometries can be very complex in the new devices due to the miniaturization technological process. A typical example is the case of a cylindrical shape that can simulate the gate all around or three gate devices such those employed in the SONOS memories [17], or in the FinFET CMOS [20] and [21] . The numerical implementation of the model of Sect.…”

Section: 1mentioning

confidence: 99%

“…The nature of the model). It is interesting to notice that the coupled set of equations (16)-(17) supplemented by the initial conditions(20) and boundary conditions (21) constitute an incompletely parabolic system of PDEs because of the need of satisfying the elliptic constraint (16a) at each time level. This issue makes the treatment of the problem quite difficult, both in analytical and numerical terms.…”

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confidence: 99%

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Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation

Mauri

Sacco

Verri

2015

Applied Mathematical Modelling

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In this article we propose and numerically implement a mathematical model for the simulation of three-dimensional semiconductor devices characterized by an heterogeneous material structure. The model consists of a system of nonlinearly coupled timedependent diffusion-reaction partial differential equations with convection terms describing the principal electrical, thermal and chemical phenomena that determine the macroscopic electrical response of the device under the action of externally applied electrical and thermal forces. The system is supplied with suitable initial, boundary and interface conditions that account for the interaction occurring among the various regions of the device with the surrounding environment. Temporal semi-discretization of the problem is carried out with the Backward Euler Method while a fixed-point iteration of Gummel type is used for system decoupling. Numerical approximation of the linearized subproblems is carried out using an exponentially fitted stabilized Finite Element Method on unstructured tetrahedral grids. Several computational experiments are included to validate the physical accuracy of the proposed computational algorithm in the study of realistic device structures.

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confidence: 99%

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confidence: 99%