2019
DOI: 10.1109/tdmr.2019.2912811
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Multiple Node Upset-Tolerant Latch Design

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Cited by 34 publications
(21 citation statements)
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“…Moreover, in highly-integrated nano-scale ICs, due to double-node charge collection [5], a radiative particle can simultaneously change the logic values of two nodes in a storage cell, and thus results in a DNU. The scenario that three nodes are simultaneously impacted is called a TNU [6][7][8][9]. Clearly, design for reliability against SNUs and/or SETs only are no longer sufficient for safety-critical applications.…”
Section: Introductionmentioning
confidence: 99%
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“…Moreover, in highly-integrated nano-scale ICs, due to double-node charge collection [5], a radiative particle can simultaneously change the logic values of two nodes in a storage cell, and thus results in a DNU. The scenario that three nodes are simultaneously impacted is called a TNU [6][7][8][9]. Clearly, design for reliability against SNUs and/or SETs only are no longer sufficient for safety-critical applications.…”
Section: Introductionmentioning
confidence: 99%
“…Xiaoqing Wen is with the Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology, Fukuoka 820-8502, Japan (E-mail: wen@cse.kyutech.ac.jp) have proposed many circuit components such as static random access memories (SRAMs) [10][11][12][13], flip-flops [14][15][16][17], and latches [6][7][8][9][18][19][20][21][22][23][24][25][26][27][28]. Note that this paper proposes two contributions, i.e., voter designs and latch hardening.…”
Section: Introductionmentioning
confidence: 99%
“…However, in the advanced highly-integrated nano-scale CMOS technologies, due to charge-sharing, a high-energy striking-particle can unfortunately simultaneously change the logic states of double nodes in a storage cell, resulting in a DNU. The scenario that triple nodes are simultaneously affected is called a TNU [4][5][6][7][8]. Obviously, reliability design against soft errors only targeting SNUs and/or SETs are no longer sufficient for high reliability requirements in safety-critical applications.…”
Section: Introductionmentioning
confidence: 99%
“…To mitigate SNUs, DNUs, TNUs, and/or SETs, by means of radiation-hardening-by-design (RHBD) approaches, many hardened storage cells such as static random access memories (SRAMs) [9][10][11][12], flip-flops [13][14][15][16], and latches [5][6][7][8][17][18][19][20][21][22][23][24][25][26][27], have been proposed. This paper focuses on latches.…”
Section: Introductionmentioning
confidence: 99%
“…To evade these radiation effects, many hardened by design techniques have been proposed to deal with Single Event Transients (SETs), SEUs and Multiple Event Transients (METs) [5]- [21]. The advantages of these methods are that they are highly resistant to SETs and SEUs.…”
Section: Introductionmentioning
confidence: 99%