2016
DOI: 10.1117/12.2228744
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Multiple wavelength silicon photonic 200 mm R+D platform for 25Gb/s and above applications

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Cited by 12 publications
(15 citation statements)
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“…Notably, thanks to a measurement conducted at the 200mm wafer level, we are able to extract statistical data which is reported in Table 1. In Si, both strip and rib losses (3.6 and 1.5 dB/cm respectively) are consistent with the previously reported silicon waveguides characteristics [2], and we can conclude that adding the SiN layer does not affect the performance of the Si waveguides. As expected, propagation losses are much lower in SiN thanks to a lower sensitivity to waveguide roughness, itself resulting from a lower optical index contrast with the SiO 2 cladding compared to Si.…”
Section: • Sin Waveguide Propagation and Bend Lossessupporting
confidence: 91%
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“…Notably, thanks to a measurement conducted at the 200mm wafer level, we are able to extract statistical data which is reported in Table 1. In Si, both strip and rib losses (3.6 and 1.5 dB/cm respectively) are consistent with the previously reported silicon waveguides characteristics [2], and we can conclude that adding the SiN layer does not affect the performance of the Si waveguides. As expected, propagation losses are much lower in SiN thanks to a lower sensitivity to waveguide roughness, itself resulting from a lower optical index contrast with the SiO 2 cladding compared to Si.…”
Section: • Sin Waveguide Propagation and Bend Lossessupporting
confidence: 91%
“…Over the last few years, our silicon photonics platform has become increasingly mature. High-performance optical components have been developed and repeatedly tested to build a complete device library [2] with reproducible performance. This Si platform is the starting point for the integration of the SiN layer.…”
Section: Fabrication Processesmentioning
confidence: 99%
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“…The device Si can act as a waveguiding core as it has larger refractive index than its surrounding silicon dioxide (SiO 2 ) or silicon nitride (SiN) materials. The material platform, most notably specified by the thickness of the device silicon, has gradually come to a consensus of around 220 nm [17][18][19][20][21] though some variations exist for better integration with transistors [22] or for more tolerable optical performance [23,24]. SiN, commonly found in many CMOS processes, can also act as a waveguiding material in Si photonics.…”
Section: Waveguiding Materialsmentioning
confidence: 99%
“…In the early days, the fabs chose 220 nm SOI as the substrate for their platform development [24], [25], [27], [31], [41]. More recently silicon photonics open-access platforms based on 310 nm SOI [26], [40], 500 nm SOI [155], SiN and Germanium-based mid-infrared platforms have also emerged. The technology, access mechanism and wafer size used are also listed in Table. I.…”
Section: Open-access Modalitiesmentioning
confidence: 99%