“…The frequency dependence of the effective mode area was modeled as shown in [17]. A constant propagation loss was used, and noise was included as a half-photon per temporal mode in the input, modeling quantum vacuum fluctuations in the Wigner representation [18]. An extended NAEE model was used to include the Raman effect [19], which empirically included the Si-N asymmetric stretching mode centered at 410 cm −1 [20], having a broadband 70 cm −1 linewidth and a relative Raman strength f R 0.2, both typical values for amorphous materials.…”
Citation for the published paper: Xing, L. ; Pu, M. ; Zhou, B. et al. (2016) "Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide".
“…The frequency dependence of the effective mode area was modeled as shown in [17]. A constant propagation loss was used, and noise was included as a half-photon per temporal mode in the input, modeling quantum vacuum fluctuations in the Wigner representation [18]. An extended NAEE model was used to include the Raman effect [19], which empirically included the Si-N asymmetric stretching mode centered at 410 cm −1 [20], having a broadband 70 cm −1 linewidth and a relative Raman strength f R 0.2, both typical values for amorphous materials.…”
Citation for the published paper: Xing, L. ; Pu, M. ; Zhou, B. et al. (2016) "Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide".
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