Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Abstract

In this report, the multiplication characteristics of InP/InGaAs avalanche photodiode (APD) with thick multiplication and charge layer have been studied theoretically and experimentally, considering the electric field distribution, carrier concentration, and different multiplication layer thickness. We find that ionization in the charge layer is very sensitive to avalanche multiplication (M) and breakdown voltage (V br ). Partial ionization in the charge layer has been suggested, which gives a good description of experimental results.