Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor

Xie, Fangqing; Lin, Xiaohang; Groß, Axel; Evers, Ferdinand; Pauly, Fabian; Schimmel, Thomas

doi:10.1103/physrevb.95.195415

Cited by 9 publications

(15 citation statements)

References 44 publications

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“…In contrast, atoms are very active in light and have much large volume comparing with electrons, the former appear more advantages in designing future devices [9]. Atomic transistors are widely studied recently by creating non-equilibrium states of atomic gas [11][12][13][14]. However, at least two basic conditions should be necessary for a photovoltaic atomic transistor.…”

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confidence: 99%

Photovoltaic Effect of Atomtronics Induced by an Artificial Gauge Field

Lai,

Ma,

Zhuang

et al. 2019

Phys. Rev. Lett.

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We investigate photovoltaic effect of atomtronics induced by artificial gauge field in four optical potentials. Effective magnetic flux gives rise to polarization of atom occupation probability which creates current of atomtronics. The relation between atomic current and magnetic flux behaves like the current-phase property in Josephson junction. The photovoltaic cell is well defined by the atomic opened system which have effective voltage and two different poles that correspond to two internal states of atomtronics. The atom flow is controllable by changing the direction of incident light and other system parameters. Detection of the atomic current intensity is available through light emission optical spectrum in experiments.PACS numbers: 37.10. Gh, 72.40.+w, 03.65.Yz, 05.60.Gg Photovoltaic transistors of electrons are widely studied in semiconductors [1][2][3][4][5][6][7][8]. To enhance the efficiency of such transistors, there is a tendency that electronic components are manufactured smaller and smaller in size. When the size of these devices becomes very tiny, electrons would hard to be detectable and their heat effect becomes serious. In contrast, atoms are very active in light and have much large volume comparing with electrons, the former appear more advantages in designing future devices [9]. Atomic transistors are widely studied recently by creating non-equilibrium states of atomic gas [11][12][13][14]. However, at least two basic conditions should be necessary for a photovoltaic atomic transistor. One is coupling between momentum of atoms and applied light, the other is an opened system of atoms.Momentum can transmit from electromagnetic field to atoms through spin-orbit coupling [15][16][17][18][19][20][21][22]. The effect of spin-orbit coupling in atomic system has been developed recently using artificial gauge field and interesting phenomenons are exploited such as effective magnetic flux in synthetic dimensions of atoms [23][24][25], quantum spin Hall effect [26][27][28], chiral conductors [29][30][31], superradiance induced particle flow [32], Kondo effect [33,34]. In the above phenomenons, dynamics of atoms play like charged particles in electromagnetic fields [35][36][37][38][39][40][41]. The earlier works reveal that atoms perform differently in special motion depending on their internal states in artificial gauge fields.In this Letter, we combine the electrodynamic feature of atoms in artificial gauge field and local optical potentials to propose a model of atomic photovoltaic cell. Similar to electrons in semiconductor quantum dots, cold atoms can be trapped in a particular optical wells [42,43]. Quite recently, the opened system of cold atoms has been realized in experiments based on the optical wells [44,45], where nonequilibrium atom flow has been observed under different chemical potentials. In order to create net current we need at least two atomic quantum dots to grantee that the phase of atom wave function coherently amplified when the atom moves from one dot to the other FIG. 1: (Co...

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confidence: 99%

Photovoltaic Effect of Atomtronics Induced by an Artificial Gauge Field

Lai,

Ma,

Zhuang

et al. 2019

Phys. Rev. Lett.

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“…Based on this notion, we have formed a diagrammatic sketch of the “off state” (Figure a) and the “on state” (Figure b) in order to explain how the Pb quantum switch works. As proposed earlier, − we assume that the quantum switch consists of a contact between two working electrodes made of a few Pb atoms. When the control potential is more positive, the electrode is covered by a relatively thick Pb–NO 3 surface layer (Θ = 1) (Figure d).…”

Section: Resultsmentioning

confidence: 99%

“…Recall that the critical voltage of the lead quantum switch in the experiment is about −18 to −30 mV. In the experiments of the Pb atomic switches, a lead reference electrode was used 30 which has a standard electrode potential of −126.2 mV with respect to the SHE. Hence, the critical voltage versus SHE in the experiment should be about −144 mV to −156 mV, which is rather close to the critical voltage of the phase transitions on lead surfaces, especially with respect to Pb(100) (−210 mV).…”

Section: Phase Diagrammentioning

confidence: 99%

“…In this paper, the nitrate-lead system has been chosen to be addressed as it corresponds to the electrochemical setup underlying a series of innovative experiments establishing atomic quantum switches, − which allow the highly controlled and reproducible switching of atomic-scale quantum point contacts by means of an independent gate electric field. These switches operate in an electrochemical environment and are based on two electrodes separated by a distance in the order of 1 nm.…”

Section: Introductionmentioning

confidence: 99%

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Restructuring of Lead Electrodes upon Adsorption of NO₃^– Anions Studied from First-Principles and Its Relevance for the Operation of Lead Quantum Switches

et al. 2021

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The adsorption of nitrate anions on Pb(100) and Pb(511) surfaces has been investigated by first-principles calculations based on density functional theory. Using the grand-canonical concept of the computational hydrogen electrode, we have determined stable nitrate adsorption structures as a function of the electrode potential. We find significant restructuring of the Pb surfaces upon exposure to a nitrate-containing electrolyte corresponding to the first steps of lead nitrate salt formation in the Pb surface layers. We observe phase transition in the surface nitrate concentrations as a function of the electrode potential, which agrees well with the switching potential observed in lead quantum contacts. Based on these results, we propose a mechanism underlying the operation of the lead quantum switch.

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“…[ 10 ] In this spirit, we have introduced atomic‐scale metallic transistors operated with a novel fundamental switching paradigm. [ 11–15 ]…”

Section: Introductionmentioning

confidence: 99%

Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt

Xie

Ducry

Luisier

et al. 2022

Adv Elect Materials

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After decades of continuous scaling, further advancement of complementary metal‐oxide‐semiconductor (CMOS) technology across the entire spectrum of computing applications is today limited by power dissipation, which scales with the square of the supply voltage. Here, an atomic‐scale tin transistor is demonstrated to perform conductive switching between bistable configurations with on/off potentials ≤2.5 mV in magnitude. In addition to the low operation voltage, the channel length of the transistor is determined experimentally and with density‐functional theory to be ≤1 nm because the atoms instead of electrons are information carriers in this device. The conductance at on‐states of the bistable configurations varies between 1.2 G0 to 197 G0 (G0 = 2e2 h−1, e stands for the electron charge and h for Planck's constant). Thus, the device can supply driving current from 1 to ≈375 µA in magnitude for logic circuits with the drain‐source dc voltage at decades of millivolts. The switching frequency of the atomic‐scale tin transistor has reached 2047 Hz. Furthermore, the on/off potentials in millivolts can reduce the energy consumption in the interconnects of integrated circuits at least by ≈400 times. Therefore, the atomic‐scale tin transistor has prospects in digital circuits with ultralow‐power dissipation and can contribute to the sustainability of modern society.

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Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor

Cited by 9 publications

References 44 publications

Photovoltaic Effect of Atomtronics Induced by an Artificial Gauge Field

Photovoltaic Effect of Atomtronics Induced by an Artificial Gauge Field

Restructuring of Lead Electrodes upon Adsorption of NO₃^– Anions Studied from First-Principles and Its Relevance for the Operation of Lead Quantum Switches

Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt

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Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor

Cited by 9 publications

References 44 publications

Photovoltaic Effect of Atomtronics Induced by an Artificial Gauge Field

Photovoltaic Effect of Atomtronics Induced by an Artificial Gauge Field

Restructuring of Lead Electrodes upon Adsorption of NO3– Anions Studied from First-Principles and Its Relevance for the Operation of Lead Quantum Switches

Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt

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Product

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Restructuring of Lead Electrodes upon Adsorption of NO₃^– Anions Studied from First-Principles and Its Relevance for the Operation of Lead Quantum Switches