Broadly tunable near-and mid-infrared lasers are of interest for a variety of applications including high-resolution spectroscopy, metrology, pumping of nonlinear optical frequency converters such as optical parametric oscillators (OPOs) and standoff chemical sensing. Tunable laser sources in the 2-3 µm region include Cr 2+ -doped chalcogenide lasers; cryogenic systems, such as color center lasers; limited tunability devices, such as Tm and Ho lasers, gas or chemical lasers, and diode lasers; and nonlinear optical devices such as OPOs. Transition-metal-doped chalcogenide lasers are of high interest because of their high versatility, broad room-temperature wavelength tunability, high optical efficiencies, and their potential to be scaled to high powers via direct diode or fiber laser pumping. To date, continuouswave, gain-switched, Q-switched and mode-locked laser operation has been demonstrated. Material advantages include broad absorption and emission bands, high fluorescence quantum efficiencies at room temperature, high gain crosssections, and minimal loss mechanisms such as excited-state absorption or upconversion. Additionally, the materials can be produced by a variety of methods, including several direct growth techniques and diffusion doping. The principal material disadvantages include a relatively large change in refractive index with temperature (large dn/dT), which can induce thermal lensing, and a short, microseconds, energy storage time. In this paper we review fundamental material properties, the current state-of-the-art of continuous-wave and pulsed Cr 2+ doped chalcogenide lasers, and recent research results.