2023
DOI: 10.1016/j.jallcom.2023.170194
|View full text |Cite
|
Sign up to set email alerts
|

Multipurpose organic–inorganic hybrid dielectrics with photothermal crosslinking of zirconium-oxo clusters

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 36 publications
0
3
0
Order By: Relevance
“…In regime (II), the electron-trap density ( n t ) values of ZOC and ZOC@PEI were estimated using eqn (5) were 1.51 × 10 12 cm −3 and 7.9 × 10 14 cm −3 , respectively.where ε r (3.1 (ref. 16)), ε 0 , e , V TFL (708 V for the ZOC device and 3.23 V for the ZOC@PEI device), and d (0.4 mm for the ZOC pellet and 1.2 μm for the ZOC@PEI film) are relative dielectric constant of ZOC, vacuum permittivity, electron charge, TFL voltage, and thickness of semiconductors. Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In regime (II), the electron-trap density ( n t ) values of ZOC and ZOC@PEI were estimated using eqn (5) were 1.51 × 10 12 cm −3 and 7.9 × 10 14 cm −3 , respectively.where ε r (3.1 (ref. 16)), ε 0 , e , V TFL (708 V for the ZOC device and 3.23 V for the ZOC@PEI device), and d (0.4 mm for the ZOC pellet and 1.2 μm for the ZOC@PEI film) are relative dielectric constant of ZOC, vacuum permittivity, electron charge, TFL voltage, and thickness of semiconductors. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Compared with common UV-sensing oxides and nitrides (Ga 2 O 3 and GaN), which require complicated and high-temperature processes to achieve a low-defect form, ZOC flakes were prepared using a simple and low-temperature process for ease of scalable production and applicability to wearable substrates. 16 To apply UV PD as a continuous photoactive film, the 2D ZOC flakes were combined with a highly transparent polyethylenimine (PEI) binder in a reasonable quantity to form a ZOC@PEI composite. The composite film was then sandwiched between the indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (commercial name: PH1000) electrodes to obtain a vertical asymmetrical metal–semiconductor–metal (MSM) structure.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, the use of intrinsically photopatternable polymeric gate dielectrics has recently been recognized as a promising method because it allows the control and partial tuning of the electronic and optical properties of transistors by modifying the interfaces between the dielectric layers and organic semiconducting layers via direct irradiation of light on the dielectric layers to induce photochemical reactions. For example, Petritz et al demonstrated high-performance p-type OTFTs by employing photopatternable ultrathin polymeric gate dielectrics, and Gold et al fabricated dielectric layers of via-hole structures with photopatternable polymers to develop an integrated active-matrix pyroelectric sensor . The other materials, including metal oxide, quantum dots, and organic–inorganic hybrid materials, have been also shown to enhance device performance via photochemical processing of these substances. Hence, it is of great importance for delicate control of the photochemical processing of electronic materials. Furthermore, another advantage of photopatternable polymer gate dielectrics is the fabrication of functional circuits at high density because direct optical patterning on polymeric materials enables the fabrication of fine microstructures, such as lines and via-holes with excellent uniformity over a large area, as Zheng et al.…”
Section: Introductionmentioning
confidence: 99%