Multiscale Simulation Studies on the Electromechanical Properties of Carbon Nanotubes

Park, Chan-Hyun; Chang, Hyunju; Kong, Ki−jeong; Park, Jong Youn; Im, Seyoung; Warschkow, Oliver

doi:10.3938/jkps.52.1281

Cited by 1 publication

(2 citation statements)

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“…To further investigate this enhancement in electrical conductance, we performed numerical simulations. The basic atomic and electronic structures of CNTs bent from 0 • to 90 • were obtained by using a home-made multiscale simulator for CNTs, K-HYBRID, which combines quantum mechanical ab initio techniques (QM), molecular mechanics (MM) and quasicontinuum mechanics (QC) simulations in a unified fashion [9]. The bent structures of a (10, 0) CNT are represented in figure 5(a).…”

Section: Resultsmentioning

confidence: 99%

“…The extraordinary electronic, mechanical and chemical characteristics of carbon nanotubes (CNTs) mean that their applications range from nanoscale electronic devices to bulk composite materials [1][2][3][4][5][6][7][8]. For instance, electronic and electrochemical sensors with CNTs show promise for the highly sensitive detection of analytes [9][10][11]. The mechanical and electromechanical characteristics of CNTs are also interesting, in that their conductance can either increase or decrease according to their band gap [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Electromechanical properties of single-walled carbon nanotube devices on micromachined cantilevers

Jeon¹,

Park²,

Lee³

et al. 2012

J. Micromech. Microeng.

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We have investigated the electromechanical properties of single-walled carbon nanotubes (SWNTs) by constructing carbon nanotube transistors on micro-cantilevers. SWNTs and ultra-long carbon nanotubes (UNTs) were grown on free-standing Si 3 N 4 membranes by using chemical vapor deposition, and electrical contacts were generated with electron beam lithography and lift-off. The cantilevers bearing SWNT devices were micromachined so that hybrid cantilevers with various spring constants were fabricated. To measure the electromechanical properties of the SWNTs, precisely controlled forces were generated by a microbalance and applied to the hybrid cantilever devices. Upon bending, the conductances of the metallic and large-gap semiconducting UNTs showed no notable change, whereas the conductances of the small-gap semiconducting UNTs and networks of SWNTs increased. Numerical simulations of bended SWNT made using a multiscale simulator supported the hypothesis that the small-gap semiconducting SWNTs undergo a metallic transformation upon bending.

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Section: Resultsmentioning

confidence: 99%