Multistacked Graphene Grown by Copper-Pocket-Assisted Chemical Vapor Deposition for Versatile Device Integration

Abstract

A single-cycle direct growth method to produce graphene films on a substrate is intriguing because it can be a straightforward method to minimize surface contaminants or explore developed structural layouts. Here, we present a simple direct growth approach to generate graphene films on a dielectric substrate via vaporized Cu-based chemical vapor deposition (CVD). Spatially ordered graphene films consisting of polycrystalline microdomains were successfully grown on the SiO 2 /Si substrate, which was featured with full surface coverage on a multithickness scale, coexisting from mono-to multistacked structures. We used photolithography and electrical isolation by an etching process to define a patterned array of contact pads (i.e., electrode graphene) with active channels of monolayer graphene or semiconducting organic material, integrating an array of transistors. This approach could be extended to a micro/nanocapacitor application enabled by electrochemical properties of directly grown microdomain-structured graphene. We envision that our series of demonstrations for versatile applications using directly grown graphene presents value-added potentials toward bioelectronics by demonstrating electrical performance with biocompatibility.