Multistate Memory Devices Based on Free‐standing VO<sub>2</sub>/TiO<sub>2</sub> Microstructures Driven by Joule Self‐Heating

Pellegrino, L.; Manca, Nicola; Kanki, Teruo; Tanaka, Hidekazu; Biasotti, M.; Bellingeri, E.; Siri, A. S.; Marré, D.

doi:10.1002/adma.201104669

Cited by 169 publications

(134 citation statements)

References 46 publications

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“…R ESISTIVE Random Access Memory (RRAM) is a quickly evolving field promising to bring cheap, extremely downscaled electronic components (memristors [1]), intrinsically capable of storing information [2] to a wide range of applications. These would include memory arrays [3], reconfigurable circuits [4], [5], logic [6] and neuromorphic computing [7], [8].…”

Section: Introductionmentioning

confidence: 99%

“…These include introducing CMOS [12], or emerging devices [13] as 'selector' elements to isolate the target device from the rest of the array, and the employment of active biasing of inactive WLs and BLs in order to divert sneak currents [10] amongst other techniques [14]. The second key advantage of RRAM concerns the potential for single-device, multi-level memory cells [2].…”

Section: Introductionmentioning

confidence: 99%

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An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution

Xing

Serb

Khiat

et al. 2016

IEEE Trans. Circuits Syst. I

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Abstract-An FPGA-based instrument with capabilities of onboard oscilloscope and nanoscale pulsing (70 ns@ ± 10 V ) is presented, thus allowing exploration of the nano-scale switching of RRAM devices. The system possesses less than 1 % read-out error for resistance range between 1 kΩ to 1 M Ω, and demonstrated its functionality on characterizing solid-state prototype RRAM devices on wafer; devices exhibiting gradual switching behaviour under pulsing with duration spanning between 30 ns to 100 us. The data conversion error-induced degradation on readout accuracy is studied extensively and verified by standard linear resistor measurements. The integrated oscilloscope capability extends the versatility of our instrument, rendering a powerful tool for processing development of emerging memory technologies but also for testing theoretical hypotheses arising in the new field of memristors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution

Xing

Serb

Khiat

et al. 2016

IEEE Trans. Circuits Syst. I

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“…1 In its lower symmetry M1 phase, the formation of the V-V dimers and the doubling of the unit cell are coupled with a splitting of the a1g (d||) electron band and an opening of a small band gap. 2,3 Associated with this transition, a dramatic change in both electron resistivity and near-infrared transparency are observed which may offer various potential applications such as thermochromic 'smart window' coatings, [4][5][6] multistate memory devices, 7,8 and ultrafast switches 9 etc. Thus, many studies have attempted to tune the MIT properties, 10,11 among which tungsten doping has received particular attention when compared to other dopants such as Ru, Nb and Mo.…”

Section: Introductionmentioning

confidence: 99%

Direct evidence of tungsten clustering in W0.02V0.98O2 thin films and its effect on the metal-to-insulator transition

Gloter

Zobelli

et al. 2014

Acta Materialia

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Substitutional tungsten doping of VO2 thin films and its effect on the metal-to-insulator transition are investigated by means of X-ray diffraction, Cs-corrected scanning transmission electron microscope (STEM) and ab-initio simulations. The W0.02V0.98O2 thin films deposited on (001) sapphire are studied in both planar and transverse geometries. The tungsten atoms are distinguishable from the V atoms in the Z-sensitive high angle annular dark field (HAADF) STEM image and their nature is further confirmed by electron energy loss spectroscopy (EELS). The W dopants are found to substitute in the V sites and form local clusters at first neighbor, preferentially along the <010>R directions. Ab-initio modeling for this 2 at.% W doped VO2 confirm the experimentally found W clustering mechanism to be the most stable substitutional configuration and they demonstrate that the binding energy of such cluster is 0.18 eV. Driving forces for short range ordering are also obtained along the <011>R and <110>R directions. Strong energetic penalty is found for the <001>R direction. Simulations indicate that the clustering helps in stabilizing the tetragonal structure, while a diluted W dopant induces more structural distortion and V-V pairing. This suggests that the clustering mechanism plays a critical role in the transition temperature evolution with the W dopants.

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“…In VO 2 nano-and microstructures, [1][2][3][4][5][6][7][8][9] the coupling of the MIT with mechanical, [3][4][5] optical, 9 thermal, 8 and electronic properties 5,7 can be used to realize tunable resonators, optical switches, and thermo-sensing devices. Furthermore, intercalation or desorption of only a few atomic percent of hydrogen or oxygen into/from VO 2 dramatically changes its transport properties, equivalent to the changes caused by inducing the MIT.…”

Section: Introductionmentioning

confidence: 99%

Research Update: Nanoscale electrochemical transistors in correlated oxides

Kanki

Tanaka

2017

APL Materials

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Large reversible changes of the electronic transport properties of solid-state oxide materials induced by electrochemical fields have received much attention as a new research avenue in iontronics. In this research update, dramatic transport changes in vanadium dioxide (VO2) nanowires were demonstrated by electric field-induced hydrogenation at room temperature through the nanogaps separated by humid air in a field-effect transistor structure with planar-type gates. This unique structure allowed us to investigate hydrogen intercalation and diffusion behavior in VO2 channels with respect to both time and space. Our results will contribute to further strategic researches to examine fundamental chemical and physical properties of devices and develop iontronic applications, as well as offering new directions to explore emerging functions for sensing, energy, and neuromorphologic devices combining ionic and electronic behaviors in solid-state materials.

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Multistate Memory Devices Based on Free‐standing VO₂/TiO₂ Microstructures Driven by Joule Self‐Heating

Cited by 169 publications

References 46 publications

An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution

An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution

Direct evidence of tungsten clustering in W0.02V0.98O2 thin films and its effect on the metal-to-insulator transition

Research Update: Nanoscale electrochemical transistors in correlated oxides

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Multistate Memory Devices Based on Free‐standing VO2/TiO2 Microstructures Driven by Joule Self‐Heating

Cited by 169 publications

References 46 publications

An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution

An FPGA-Based Instrument for En-Masse RRAM Characterization With ns Pulsing Resolution

Direct evidence of tungsten clustering in W0.02V0.98O2 thin films and its effect on the metal-to-insulator transition

Research Update: Nanoscale electrochemical transistors in correlated oxides

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Multistate Memory Devices Based on Free‐standing VO₂/TiO₂ Microstructures Driven by Joule Self‐Heating