Multiwavelength Micro-Raman Characterization of Epitaxial Si1−x Ge x Layers on Si(100) and In-Line Process Monitoring Applications

Chang, Chun‐Wei; Hong, M.; Tsai, Ming-Shiun; Lee, Kuan-Ching; Lee, Wei-Fan; Chuang, Yen; Fan, Yu-Ta; Ueda, Takeshi; Ishigaki, Toshikazu; Kang, Kitaek; Yoo, Woo Sik

doi:10.1007/s11664-012-2207-2

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…Details of Ge content monitoring using Raman spectroscopy can be found in previous reports. [25][26][27][28][29][30][31][32][33][34] Raman characterization of intermixing between Si and Ge in epitaxial Ge on Si, Si/Ge core-shell nanowires and Si/Ge/Si core-double shell nanowires after annealing has been reported. [35][36][37][38] Figures 9-11 show multiwavelength (457.9 nm, 488.0 nm and 514.5 nm) excitation Raman spectra in the wavenumber range of 490 cm −1 ∼ 550 cm −1 covering the Si peak at ∼520 cm −1 and Si-Si peak of Si 1-x Ge x from as received TiN/Ni/Si 1-x Ge x /SiO 2 /Si with various Ge content.…”

Section: Resultsmentioning

confidence: 99%

Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides

Yoo¹,

Kang²,

Ishigaki³

et al. 2020

ECS J. Solid State Sci. Technol.

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Thermal silicidation characteristics of Ni/Si1-xGex with various Ge content was studied under different annealing temperatures in the range of 225 °C ∼ 400 °C in 100% N2 ambient. TiN capped Ni/Si1-xGex/Si/SiO2/Si wafers with x values in the range of 0.15 and 0.30 in 0.05 intervals were used. Thermal silicide formation was performed in a stacked hotplate-based annealing system designed for industrial 300 mm wafer fabs. For silicide characterization, measurements of spectral reflectance, sheet resistance, Raman spectra as well as X-ray diffraction curves were performed to investigate changes of optical properties, electrical properties, crystallographic phases during silicide formation. Effects of Ge content and annealing temperature on the electrical and crystallographic properties of the resulting thermal silicides (nickel germanosilicides) were investigated. Reaction mechanisms were discussed based on the characterization results. Multiwavelingth micro-Raman spectroscopy was found to be very promising as a non-contact, in-line silicidation process monitoring technique. For production worthiness verification of the thermal silicidation process, temperature sensitivity curves of sheet resistance, its uniformity and detailed sheet resistance maps were investigated using 8 nm thick Ni films on 300 mm diameter, epitaxial Si0.8Ge0.2/p−-Si wafers without a capping layer. Manufacturability of Ni/Si0.80Ge0.20/Si wafers were also verified using a stacked hotplate-based, nearly isothermal, annealing system.

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Section: Resultsmentioning

confidence: 99%

Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides

Yoo¹,

Kang²,

Ishigaki³

et al. 2020

ECS J. Solid State Sci. Technol.

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Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

Yoo¹,

Kim

Han

2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Characterization of silicon stress near copper (Cu)-filled through-silicon via(s) (TSVs) was demonstrated using high-resolution micro-Raman spectroscopy. For depth profiling of Si stress distribution near TSVs, a polychromator-based, multiwavelength excitation Raman measurement with different probing depths was used. The design concept of the polychromator-based, multiwavelength micro-Raman spectroscopy system, including the importance of the high-spectral resolution and multiwavelength excitation capability in three-dimensional (3-D) Si stress characterization, was described. Silicon stress near Cu-filled TSVs, with various sizes and layouts, was measured and analyzed before and after Cu annealing steps. Main factors impacting Si stress near Cu-filled TSVs are analyzed based on Raman characterization results on various types of TSV structures, layouts, and Cu annealing conditions. Large variations in Si stress in TSV arrays were measured in wafers with poor Cu fill characteristics and in wafers annealed in nonoptimized conditions. The Cu annealing sequence and annealing conditions are found to be significantly important for managing Si stress and the reliability of Cu-filled TSVs. Substantially lower Si stress was measured near Cu-filled TSVs with voids. Multiwavelength microRaman spectroscopy can be used as a very effective noncontact, nondestructive, inline TSV process and Si stress monitoring technique.

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Multiwavelength Micro-Raman Characterization of Epitaxial Si1−x Ge x Layers on Si(100) and In-Line Process Monitoring Applications

Cited by 2 publications

References 13 publications

Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides

Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

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