Muon-spin-resonance study of muonium dynamics in Si and its relevance to hydrogen

Kreitzman, S. R.; Hitti, B.; Lichti, R.L.; Estle, T. L.; Chow, K. H.

doi:10.1103/physrevb.51.13117

Cited by 96 publications

(81 citation statements)

References 27 publications

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“…For intermediate eSRs (0.01 < eSR < ∼1 MHz), neither the position nor the absolute width of the ALC are significantly affected. The main effect of this additional electron spin relaxation is a change in ALC intensity, as a result of an increased time-dependent relaxation, 25,28 which is exactly as observed in the data shown in Fig. 3(a).…”

Section: B Electron Spin Relaxation Ratesupporting

confidence: 72%

“…In solids therefore experimental data tend to be dominated by the 1 transitions, which is an extraordinarily sensitive probe of radical dynamics, [25][26][27] including the electron spin relaxation rate. 25,28 The muon experiments were performed on the ARGUS, EMU, and HIFI spectrometers at the ISIS Muon Source, Rutherford Appleton Laboratory and the DOLLY spectrometer at the Laboratory for Muon Spectroscopy, Paul Scherrer Institute. 115 mg of TIPS-pentacene, 190 mg of rubrene, and 800 mg of Gaq 3 were placed into 15 × 25 mm envelopes made from 25 μm thick silver foil (99.99 % pure).…”

Section: B Muon Spin Relaxation Techniquementioning

confidence: 99%

“…Muons implanted with their spins parallel or antiparallel to the field are thus in an eigenstate, and no time evolution of spin polarization is expected. 25 At a particular longitudinal field cross relaxation effects produce a so-called avoided level crossing (ALC), at what would otherwise be energy-level degeneracies, and eigenstates are mixtures between two Zeeman states. Whenever the two mixing levels belong to different muon magnetic quantum states, the muon's spin polarization oscillates between the two.…”

Section: B Muon Spin Relaxation Techniquementioning

confidence: 99%

“…The position and linewidth of these so-called ALC resonances are determined by the muon-electron isotropic and anisotropic hyperfine coupling (HFC). 21,25 In solids, dipolar coupling drives a single-particle muon spin-flip ( 1 ) transition, which is absent in liquids and is independent of the other nuclei in the system. The width of the 1 line depends on the dipolar coupling strength but its intensity (asymmetry change) remains constant.…”

Section: B Muon Spin Relaxation Techniquementioning

confidence: 99%

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Importance of intramolecular electron spin relaxation in small molecule semiconductors

et al. 2011

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Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport.

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Section: B Electron Spin Relaxation Ratesupporting

confidence: 72%

Section: B Muon Spin Relaxation Techniquementioning

confidence: 99%

Section: B Muon Spin Relaxation Techniquementioning

confidence: 99%

Section: B Muon Spin Relaxation Techniquementioning

confidence: 99%

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Importance of intramolecular electron spin relaxation in small molecule semiconductors

et al. 2011

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“…While hydrogen can be difficult to directly assess spectroscopically, the well-defined creation and decay properties of muons has led to significant success in the use of µSR as a spectroscopic probe of isolated defect centres in semiconductors that differ from hydrogen only by a mass factor (m Mu /m H ≈ 1/9) and the associated small difference in zero-point energy [85]. While µSR studies of conventional semiconductors such as Si [86] or GaAs [87] found charge transition levels for muonium lying deep within the band gap, as would be expected for the conventional behaviour of hydrogen in these materials, such measurements [84] provided the first spectroscopic evidence of the donor-nature of hydrogen in ZnO, summarized in Fig. 5.…”

Section: Donor Nature Of Hydrogenmentioning

confidence: 99%

Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

226

180

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Abstract. Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band-gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the presence of interstitial and substitutional species are still somewhat open questions, it is one of the leading contenders for unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case of conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity based on features of the bulk band structure common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

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Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons

Martins

Kumar

Woerle

et al. 2023

Adv Materials Inter

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Muon spin rotation with low‐energy muons (LE‐µSR) is a powerful nuclear method where electrical and magnetic properties of surface‐near regions and thin films can be studied on a length scale of ≈200 nm. This study shows the potential of utilizing low‐energy muons for a depth‐resolved characterization of oxide‐semiconductor interfaces, i.e., for silicon (Si) and silicon carbide (4H‐SiC). The performance of semiconductor devices relies heavily on the quality of the oxide‐semiconductor interface; thus, investigation of defects present in this region is crucial to improve the technology. Silicon dioxide (SiO2) deposited by plasma‐enhanced chemical vapor deposition (PECVD) and grown by thermal oxidation of the SiO2‐semiconductor interface are compared with respect to interface and defect formation. The nanometer depth resolution of LE‐µSR allows for a clear distinction between the oxide and semiconductor layers, while also quantifying the extension of structural changes caused by the oxidation of both Si and SiC. The results demonstrate that LE‐µSR can reveal unprecedented details on the structural and electronic properties of the thermally oxidized SiO2‐semiconductor interface.

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Muon-spin-resonance study of muonium dynamics in Si and its relevance to hydrogen

Cited by 96 publications

References 27 publications

Importance of intramolecular electron spin relaxation in small molecule semiconductors

Importance of intramolecular electron spin relaxation in small molecule semiconductors

Conductivity in transparent oxide semiconductors

Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons

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