Mutual influence on aggregation and magnetic properties of graphene oxide and copper phthalocyanine through non-covalent, charge transfer interaction

Markad, Ganesh B.; Nimmakayala, Padma; Chadha, Ridhima; Gupta, Kartick; Rajarajan, A. K.; Deb, P.; Kapoor, Sudhir

doi:10.1016/j.apsusc.2019.144624

Cited by 17 publications

(10 citation statements)

References 56 publications

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“…Importantly, these observations strongly suggest that attachment of MPc to GO was via hydrogen bonding. This is because a slight blue shift could normally be expected instead of a strong red shift in case of only π ‐ π stacking, as reported by Markad et al [ 12 ] Besides, such a red shift might indicate a longer electron delocalization, and thus, indicator of an enhanced charge transport in MPc‐GO. [ 36 ]…”

Section: Resultsmentioning

confidence: 76%

“…Only a limited number of studies focused on what will happen if the conjugation is maintained by π ‐ π stacking. [ 12 ] In this context, Markad et al used unsubstituted Pc to realize conjugation between Pc and GO through only π‐π stacking, and reported a slightly improved optoelectronic performance. [ 12 ] However, the research question of “what will happen if the conjugation is realized only through hydrogen bonding (in addition to π‐π stacking) under extremely limited processing times” still remains unanswered.…”

Section: Introductionmentioning

confidence: 99%

“…[ 12 ] In this context, Markad et al used unsubstituted Pc to realize conjugation between Pc and GO through only π‐π stacking, and reported a slightly improved optoelectronic performance. [ 12 ] However, the research question of “what will happen if the conjugation is realized only through hydrogen bonding (in addition to π‐π stacking) under extremely limited processing times” still remains unanswered. Accordingly, the present work aims at answering this question through incorporation of GO to imidazole substituted metal‐free Pc (MPc) via only 1–10 min of sonication process and a detailed characterization of the structural, morphological, and optoelectronic properties of the resultant MPc‐GO composites.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Incorporation of graphene oxide to metal‐free phthalocyanine through hydrogen bonding for optoelectronic applications: An experimental and computational study

Yabaş

Şenadım‐Tüzemen

Maslow

et al. 2023

J of Physical Organic Chem

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This paper focuses on incorporation of graphene oxide (GO) to metal‐free phthalocyanine (MPc) through only hydrogen bonding and π‐π stacking. Briefly, Pc‐GO composites at various concentrations were prepared by self‐assembly method. The processing time was kept below 10 min to avoid covalent attachment and we aimed at answering the research question of what will happen if the conjugation is realized only through hydrogen bonding under extremely limited processing times. The as‐prepared MPc‐GO composites were characterized by Fourier transform infrared (FT‐IR), UV‐Vis, scanning electron microscope (SEM), and fluorescence analysis. We report that the interaction between MPc and GO could immediately be initiated upon mixing of corresponding solutions. Also, complete conjugation by hydrogen bonding and π‐π stacking could be reached even only in 5 min of sonication time. In addition, it was also determined that the prepared MPc‐GO composites are stable at room conditions and during dilution. Finally, the optoelectronic properties of MPc and MPc‐GO composites were also investigated experimentally and theoretically. Both experimental and theoretical results suggest that MPc‐GO composites exhibit improved optoelectronic properties as compared to MPc, even though the conjugation of GO to MPc was only via hydrogen bonding without covalent attachment.

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Section: Resultsmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Incorporation of graphene oxide to metal‐free phthalocyanine through hydrogen bonding for optoelectronic applications: An experimental and computational study

Yabaş

Şenadım‐Tüzemen

Maslow

et al. 2023

J of Physical Organic Chem

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“…This movement is made possible by the delocalized π‐electron system. This system enables efficient electron transport along the sheet's basal plane 141 . However, the presence of sp3 hybridized regions and lattice defects can create energy barriers and decrease the material's overall electronic conductivity 142 .…”

Section: Gomentioning

confidence: 99%

Understanding the chemistry of graphene oxide on redox flow lithium‐ion batteries with a view to enhancing the battery's high‐density storage

Onoh,

Nwanya,

Shinde

et al. 2023

Asia-Pacific J Chem Eng

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The use of graphene oxide (GO) has shown potential in improving the performance of redox flow lithium‐ion batteries (RFLIBs). These types of batteries use a liquid electrolyte containing redox‐active species to store and release energy. Despite being scalable, RFLIBs face limitations, namely, low energy density of the electrolyte and reduced cycling stability of the electrodes. However, GO's unique properties, such as its high conductivity as well as large surface area, create an attractive option for enhancing the electrochemical properties of both the electrolyte and electrodes in RFLIBs. When used as an electrode, GO improves the kinetic reversibility reactions, leading to increased electrochemical activity towards redox couples. Charge transfer resistances of positive and negative reactions are reduced, leading to increased voltage energy and efficiency of lithium batteries in terms of energy usage. As redox flow batteries made of lithium ions are an established subsystem and a growing research and development field, there is potential to enhance their performance and reduce costs through the use of GO. The objective of this review is to provide an overview of the chemistry of GO as it pertains to RFLIBs use, covering topics such as its surface chemistry, functionalization, and interactions with redox‐active species, as well as its potential for enhancing high‐density storage of electricity in batteries. Specifically, it will discuss the impact of GO on redox reactions in the electrolyte, including its ability to raise the redox‐active species concentration as well as enhance their stability. The review will also examine how GO impacts the electrodes, including its potential to increase their surface area and conductivity and promote cycling stability. Additionally, the review will address the importance of optimizing the quantity and distribution of GO in both the electrolyte and electrodes of RFLIBs.

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“…GO can be dispersed in a variety of solvents, which permits compatible processes with a wide range of commercially available flexible substrates. With various technologies like spin coating [164][165][166], drop casting [167][168][169], dip coating [170][171][172], and inkjet printing [157,173,174], GO dielectric layers can be deposited onto flexible substrates like polyethylene terephthalate (PET), polyether sulfone (PES), and polyimide [175][176][177][178][179][180]. In addition, the thickness of a single atomic layer and the excellent dispersibility in various solvents result in GO having enhanced compatibility with different commercial substrates [181][182][183].…”

Section: Application Of Graphene-based Memristors In Flexible Electromentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Mutual influence on aggregation and magnetic properties of graphene oxide and copper phthalocyanine through non-covalent, charge transfer interaction

Cited by 17 publications

References 56 publications

Incorporation of graphene oxide to metal‐free phthalocyanine through hydrogen bonding for optoelectronic applications: An experimental and computational study

Incorporation of graphene oxide to metal‐free phthalocyanine through hydrogen bonding for optoelectronic applications: An experimental and computational study

Understanding the chemistry of graphene oxide on redox flow lithium‐ion batteries with a view to enhancing the battery's high‐density storage

Memristive Non-Volatile Memory Based on Graphene Materials

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