Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Sartori, André F.; Schreck, M.

doi:10.1002/pssa.201431239

Cited by 6 publications

(5 citation statements)

References 26 publications

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“…In their study, this behavior was attributed to an expansive stress induced by nitrogen. The latter could be the same reason in our case but other phenomena such us the surface reorganization suggested by Sartori and coworkers and discussed in the previous paragraphs . Consequently, the introduction of nitrogen in the gas mixture permits to partially compensate the strain induced by the boron incorporation.…”

Section: Resultssupporting

confidence: 82%

“…Such behavior can be attributed to the difference of the atom radius of carbon, boron, and nitrogen. We could also attribute this effect to the reorganization of the growth surface due to the presence of nitrogen as already suggested in a previous study . Codoping thus appears as a useful strategy for producing improved p + substrates that are potentially suitable for the development power electronics.…”

Section: Resultssupporting

confidence: 65%

“…Therefore, the catalytic role of nitrogen that is supposed to reduce the energy barriers in the reaction path leading to incorporation of carbon atoms to the diamond lattice might be suppressed or limited . A recent investigation by the same group points out the suppression of the growth rate enhancement by N 2 when boron is added in the gas phase . Moreover, the addition of oxygen seems to restore this behavior but only when low amount of boron are injected in the gas mixture.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Issaoui

Tallaire

Mrad

et al. 2019

Physica Status Solidi (a)

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For the fabrication of vertical power electronic components, the use of a freestanding highly boron-doped single crystal diamond substrate is mandatory, on top of which a thin low-doped active layer is overgrown. The crystalline quality of this substrate is of prime importance as the high doping level required is also likely to lead to the generation of extended defects in the active layer. Herein, the improvement of the quality of thick highly boron-doped diamond films grown by chemical vapor deposition (CVD) is investigated. Codoping with a low amount of nitrogen is explored as a way to limit the formation and propagation of extended defects. It is shown that the growth rate and boron concentration are not impacted by the addition of nitrogen with the parameters used in this study. Surface morphology and defect density estimated for each amount of nitrogen are presented; and Raman spectroscopy confirms that nitrogen addition compensates the strain induced by boron incorporation in single crystal diamond. Codoping with nitrogen is thus demonstrated as a useful strategy to obtain high quality boron-doped diamond substrates potentially suitable for the development of power devices.

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Section: Resultssupporting

confidence: 82%

Section: Resultssupporting

confidence: 65%

Section: Resultsmentioning

confidence: 99%

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Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Issaoui

Tallaire

Mrad

et al. 2019

Physica Status Solidi (a)

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“…The stereochemistry of these localities and edges is different from a (100) surface looking rather like (111), (113), or even (110) surfaces [64][65][66]. Additionally, it has been observed by many groups that trace additions of nitrogen (0 to 10 ppm) to the gas reactants can dramatically increase the growth rate and change the surface morphology [67,68]. A mechanism of the catalytic role of N for the growth rate on (111) surfaces has been discussed in [69].…”

Section: Nitrogen Dopingmentioning

confidence: 98%

Nitrogen-doped CVD diamond: Nitrogen concentration, color and internal stress

Зайцев

Kazuchits

et al. 2020

Diamond and Related Materials

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Single crystal CVD diamond has been grown on (100)-oriented CVD diamond seed in six layers to a total thickness of 4.3 mm, each layer being grown in gas with increasing concentration of nitrogen. The nitrogen doping efficiency, distribution of color and internal stress have been studied by SIMS, optical absorption, Raman spectroscopy and birefringence imaging. It is shown that nitrogen doping is very non-uniform. This non-uniformity is explained by the terraced growth of CVD diamond. The color of the nitrogen-doped diamond is grayish-brown with color intensity gradually increasing with nitrogen concentration. The absorption spectra are analyzed in terms of two continua representing brown and gray color components. The brown absorption continuum exponentially rises towards short wavelength. Its intensity correlates with the concentration of nitrogen C-defects. Small vacancy clusters are discussed as the defects responsible for the brown absorption continuum. The gray absorption continuum has weak and almost linear spectral dependence through the near infrared and visible spectral range. It is ascribed to carbon nanoclusters which may form in plasma and get trapped into growing diamond. It is suggested that Mie light scattering on the carbon nanoclusters substantially contributes to the gray absorption continuum and determines its weak spectral dependence. A Raman line at a wavenumber of 1550 cm −1 is described as a characteristic feature of the carbon nanoclusters. The striation pattern of brown/gray color follows the pattern of anomalous birefringence suggesting that the vacancy clusters and carbon inclusions are the main cause of internal stress in CVD diamond. A conclusion is made that high perfection of seed surface at microscale is not a required condition for growth of low-stress, low-inclusion single crystal CVD diamond. Crystallographic order at macroscale is more important requirement for the seed surface.

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“…Meanwhile, by comparing the three growth rates obtained under the gas condition of Mode #6, it can be seen that the original nitrogen doping has significantly increased the growth rate, while the supplementary nitrogen doping experiment just further increased that. Sartori et al have reported that there is a nitrogen concentration threshold regulating effect on the growth rate of nitrogen doped diamond in the presence of 10 −2 -10 −1 ppm of low boron impurity concentration in the chamber [50]. It means that under low nitrogen flow rate, the acceleration effect of nitrogen on diamond growth can be canceled by the presence of boron.…”

Section: Resultsmentioning

confidence: 99%

An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth

Zhao

Teng

Tang

et al. 2023

J. Phys. D: Appl. Phys.

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A novel design of the gas inlet system in a diamond microwave plasma chemical vapor deposition growth chamber has been reported in this paper. The design is targeting for high-quality, high-speed, and high-efficiency diamond material fabrication. By introducing a gas inlet hole into the susceptor, we expand the ways of gas introduction for diamond growth. After extensive numerical and experimental investigation, we have found that the introduction of methane and doping gas inlet from the hole of below while the hydrogen from the top is feasible for realizing the target. The growth and doping species could be confined around the substrate, making efficient usage of the precursors. The plasma state change caused by the difference of the gas inlet modes has been ascribed to the resulted gas distribution in the chamber. The measured growth rate has been increased to 32 μm/h, which is 16 times higher than traditional gas inlet configuration. Meanwhile, a large improvement of the nitrogen doping concentration has been achieved. Besides, with the increase of growth rate and nitrogen incorporation efficiency, the crystal quality and surface morphology keep in an acceptable degree. In this mode, the dual gas flow system can perfectly solve the contradiction among the crystal quality, growth rate, and doping efficiency, commonly existing during the material fabrication process, the chamber contamination could be significantly suppressed due to the constrained distribution of methyl and doping species, making the fabrication cost much lower. The results of repetitive experiments indicate that other residual impurities present in the chamber of MPCVD could likely regulate the threshold concentration of nitrogen required for accelerating the growth rate during the nitrogen doped diamond growth, which have a significant effect on the diamond growth.

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Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Cited by 6 publications

References 26 publications

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Nitrogen-doped CVD diamond: Nitrogen concentration, color and internal stress

An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth

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