2017
DOI: 10.7567/apex.11.013005
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Mutual synchronization of spin-torque oscillators consisting of perpendicularly magnetized free layers and in-plane magnetized pinned layers

Abstract: A mutual synchronization of spin-torque oscillators coupled through current injection is studied theoretically. Models of electrical coupling in parallel and series circuits are proposed. Solving the Landau-Lifshitz-Gilbert equation, excitation of in-phase or antiphase synchronization, depending on the ways the oscillators are connected, is found. It is also found from both analytical and numerical calculations that the current-frequency relations for both parallel and series circuits are the same as that for … Show more

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Cited by 23 publications
(19 citation statements)
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“…By approximating that θ = θ J is constant, the frequency can be derived by substituting the Eq. ( 10) in the equation nT 0 dθ dt dt = 0 [49,32,50], where n is the number of oscillations, as…”
Section: Frequency and Power Spectral Density Of The Oscillationsmentioning
confidence: 99%
“…By approximating that θ = θ J is constant, the frequency can be derived by substituting the Eq. ( 10) in the equation nT 0 dθ dt dt = 0 [49,32,50], where n is the number of oscillations, as…”
Section: Frequency and Power Spectral Density Of The Oscillationsmentioning
confidence: 99%
“…Spintronics has been the major focus topic of research in last three decades . Devices based on spintronics have shown potential applications in the data storage devices, non‐volatile magnetic random‐access memory (MRAM), spin torque oscillators, magnonics, spin Hall magnetic sensor, spin orbit torque (SOT)‐induced magnetic switching, etc. Giant magnetoresistance (GMR)‐based devices utilized spin polarized current to switch the magnetization .…”
Section: Parameters Used To Get the Best Fit Of The Xrr Data For The mentioning
confidence: 99%
“…Among all of these four configurations, the case 1 and case 2 can not provide large magnetoresistance change thus lead to small emitted power while case 3 need another in-plane magnetization layer for signal readout. The configuration of case 4 can provide intrinsically large magnetoresistance change which is beneficial for power emission [32][33][34][35][36][37] . Experimentally the high emitted power of STNO with case 4 configuration is demonstrated.…”
Section: Introductionmentioning
confidence: 99%