MXene based saturation organic vertical photoelectric transistors with low subthreshold swing

Abstract

Vertical transistors have attracted enormous attention in the next-generation electronic devices due to their high working frequency, low operation voltage and large current density, while a major scientific and technological challenge for high performance vertical transistor is to find suitable source electrode. Herein, an MXene material, Ti3C2Tx, is introduced as source electrode of organic vertical transistors. The porous MXene films take the advantage of both partially shielding effect of graphene and the direct modulation of the Schottky barrier at the mesh electrode, which significantly enhances the ability of gate modulation and reduces the subthreshold swing to 73 mV/dec. More importantly, the saturation of output current which is essential for all transistor-based applications but remains a great challenge for vertical transistors, is easily achieved in our device due to the ultra-thin thickness and native oxidation of MXene, as verified by finite-element simulations. Finally, our device also possesses great potential for being used as wide-spectrum photodetector with fast response speed without complex material and structure design. This work demonstrates that MXene as source electrode offers plenty of opportunities for high performance vertical transistors and photoelectric devices.

Tuning the Work Function of Ti3C2Tx MXene by Molecular Doping without Changing its Surface Functional Groups

“…In this regard, the main challenge with tuning the MXene WF is that, like most of the key properties of MXenes, it strongly depends on the surface composition and the local dipoles between the early transition metal and the T x groups . Thus, tailoring the surface configuration of MXenes can dramatically change many of their properties, including the surface-termination-dependent ones, e.g., WF, − SP oscillations, and optoelectronic characteristics. ,− Nowadays, given the rise in employing MXenes as electrodes, carrier transport layers, and photoresponsive materials in several applications, ,,,− barrier heights with other materials often require the adjustment of the WF of MXenes, yet without changing any of its other fundamental properties. However, owing to the simultaneous dependence on T x , tailoring the WF of MXenes could induce undesirable changes in their other surface-termination-dependent functionalities.…”

Self-powered high-sensitivity all-in-one vertical tribo-transistor device for multi-sensing-memory-computing

“…1f , where Mxenes exhibit nanosheets structure, and the thickness of MXenes network source electrode is about 1 nm. Fig 1g shows the high-resolution TEM image, and the corresponding lattice spacing in this layer is 0.3 nm 45 . The electrostatic induction and triboelectrification between gate electrode and insulating layer would induce the electrode-double-layer effects, which manifests in a transient channel current, thus realizing the multi-sensing-memory-computing function.…”

CsPbBr3 quantum dots/PDVT-10 conjugated polymer hybrid film-based photonic synaptic transistors toward high-efficiency neuromorphic computing

“…The conjugated polymer of PDVT-10 (Fig. 1b) was adapted because of its ultrahigh charge carrier mobility and good environmental stability [48][49][50]. The intro-duction of PDVT-10 will be beneficial for improving the charge transport performance and stability of CsPbBr 3 QDs.…”