1995
DOI: 10.1143/jjap.34.l1257
|View full text |Cite
|
Sign up to set email alerts
|

N-Channel Metal-Oxide-Semiconductor Device with the Step-Functional I-V Curves Caused by the Punch-Through between Drain and Inversion Layer of the Gate

Abstract: A precision force balancing accelerometer for inertial navigation applications is developed. The low-sensitivity threshold and high thermal stability are considered as design parameters. In order to guarantee a low-sensitivity threshold while maintaining robustness against shock, push-pull type long flexures are used in this paper. To improve thermal stability, this paper discusses the use of electromagnets as a magnetic field source and develops the silicon case together with the temperature compensator. The … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 9 publications
(10 reference statements)
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?