N-Channel MOSFETs With Embedded Silicon–Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

Strained n-Channel Field-Effect Transistors with Channel Proximate Silicon–Carbon Source/Drain Stressors for Performance Enhancement

“…Through advanced annealing techniques, the issue of S/D resistance for Si:C S/D can potentially be minimized for further I on enhancement. 12,26,27 Impact of channel orientation design.-To improve I on in nFETs, integration schemes involving different substrate and channel orientations have been proposed. 34 Hybrid Si substrates with different crystal orientations through wafer bonding and selective epitaxy can be used to improve complementary metal-oxide semiconductor performance at the cost of increased process complexity.…”

“…Recently, the embedded silicon-carbon ͑e-Si:C͒ source/drain ͑S/D͒ stressor has gained attention as another viable option for strain engineering of silicon nFETs. [5][6][7][8][9][10][11][12][13][14][15][16] The e-Si:C S/D stressor can be formed using selective epitaxial growth, [5][6][7][8][9][10][13][14][15] or by ion implantation of carbon followed by solid-phase epitaxy ͑SPE͒. 11,12 With the scaling down of the gate pitch for higher circuit density, the effective stress in the channel due to various strain engineering schemes generally decreases.…”

“…[5][6][7][8][9][10][11][12][13][14][15][16] The e-Si:C S/D stressor can be formed using selective epitaxial growth, [5][6][7][8][9][10][13][14][15] or by ion implantation of carbon followed by solid-phase epitaxy ͑SPE͒. 11,12 With the scaling down of the gate pitch for higher circuit density, the effective stress in the channel due to various strain engineering schemes generally decreases. As a result, performance degradation associated with stress loss due to pitch scaling can be substantial.…”

Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation

“…One is Si 1Àx C x epitaxial growth directly on a Si substrate, 8,10) and the other is C I/I into a Si wafer surface followed by thermal annealing. 9,11,12) As a result of the extremely low solid solubility of C atoms in Si, the Si 1Àx C x epitaxial process cannot easily achieve a higher substitutional C concentration than 1% (x > 1%). 13) In this work, we focus on C I/I technology.…”

Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si

“…4,6,7 In order to achieve high substitutional C levels, C sub,eff , with implanted C, formation of a dense amorphous layer, formed by a pre-implant with Ge when atomic C is used or, taking advantage of the self-amorphization characteristics of molecular ions, "cluster" ion C implants, followed by solid-phase epitaxial growth during RTA or laser annealing has been reported. [6][7][8][9][10][11] Microwave annealing, MWA, has shown the ability to re-grow amorphized damage layers and achieve high dopant activation levels while suppressing dopant diffusion for implanted dopants. [12][13][14][15][16][17] The present work investigates the use of "cluster ion" C and (single ion) P implants and MWA to achieve high C sub,eff and strain levels while at the same time activating P and restraining dopant diffusion.…”