2011
DOI: 10.1002/adma.201103238
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n‐Doping of Organic Electronic Materials using Air‐Stable Organometallics

Abstract: Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene)ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 10(6) at 4 V.

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Cited by 171 publications
(177 citation statements)
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“…16 Dimeric organometallic reductants of the same class as those used in the C 60 study have also been used to n-dope materials processed from solution, including the polymer poly{[N,N 0 -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5 0 -(2,2 0 -bithiophene)}, P(NDI 2 OD-T 2 ). 20,21 We show here that the charge-transport properties of films cast from solution containing P(NDI 2 OD-T 2 ) and ultra-low concentrations of the organometallic n-dopant pentamethylrhodocene dimer, [RhCp*Cp] 2 , follow a similar dependence on dopant concentration to that previously seen for C 60 .…”
supporting
confidence: 69%
See 1 more Smart Citation
“…16 Dimeric organometallic reductants of the same class as those used in the C 60 study have also been used to n-dope materials processed from solution, including the polymer poly{[N,N 0 -bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5 0 -(2,2 0 -bithiophene)}, P(NDI 2 OD-T 2 ). 20,21 We show here that the charge-transport properties of films cast from solution containing P(NDI 2 OD-T 2 ) and ultra-low concentrations of the organometallic n-dopant pentamethylrhodocene dimer, [RhCp*Cp] 2 , follow a similar dependence on dopant concentration to that previously seen for C 60 .…”
supporting
confidence: 69%
“…24,25 The concentration of P(NDI 2 OD-T 2 ) in toluene was kept constant at 10 mg/ml throughout all measurements to achieve uniform film thicknesses across devices. The dopant solution was added to the host solution in very small amounts, ranging from 7.8 Â 10 À5 to 7.8 Â 10 À3 molar ratio (MR), which correspond to doping densities of 6 Â 10 16 to 6 Â 10 18 26,27 and previous experiments on the closely related rhodocene dimer/ P(NDI 2 OD-T 2 ) system 20,21 indicate the feasibility of the reaction, as shown in Fig. 1.…”
mentioning
confidence: 89%
“…Through structural optimization they achieve electrical conductivities and thermoelectric power factors as high as 0.5 S.cm −1 and 1.4 μW.m −1 K −2 , respectively. A variety of new organometallic complexes, 87 hydride donors, 1,3-Dimethyl-2-phenyl-2,3-dihydro-1H-benzoimidazole (DMBI), 88 and…”
Section: N-type Organic Thermoelectric Materialsmentioning
confidence: 99%
“…[14] Therefore, finding a molecular donor, compatible with both vacuum-deposition and solution processes such as drop-casting, is desirable to be incorporated as a WF-reducer for bottom and top electrodes into all-solution processed or multilayer devices. [17]- [18] The dimers formed by some 19-electron organometallic sandwich compounds, such as the dimer of 1,2,3,4,5-pentamethylrhodocene (1 2 , molecular structure shown in Figure 1), are promising candidates for this purpose: their reductant ability has already been demonstrated by the effective n-doping for a variety of organic semiconductors, [19] their 18-electron configurations lead to moderate air-stability, and they can be processed using both vacuum deposition at low temperature (~120 ºC) and solution processes. [19] Indeed, the Ir analogue of 1 2 has been used to reduce the WF of ITO, ZnO, and Au via dip-coating, [20] and the dimer of ruthenium pentamethylcyclopentadienyl mesitylene has been shown to reduce the WF of ITO by dip-coating [20] and that of ZnO through vacuum processing, [21] and 1 2 has been used to reduce the WF of CVD graphene by dip-coating.…”
Section: Introductionmentioning
confidence: 99%
“…In the present case, the interfacial electron transfer converts the neutral 1 2 to the cationic monomers of 1 2 (1 + ). [11], [19], [20] The positive potential caused by the resulting surface layer of 1 + cations leads to the WF reduction of the substrates.…”
Section: Introductionmentioning
confidence: 99%