N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Sun, Qian; Cho, Yong Suk; Kong, Bo Hyun; Cho, Hyung Koun; Ko, Tsung-Shine; Yerino, Christopher D.; Lee, In Hwan; Han, Jung

doi:10.1016/j.jcrysgro.2009.01.059

Cited by 55 publications

(44 citation statements)

References 26 publications

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“…(It could be mentioned that recently we have managed to greatly improve the surface morphology of the films grown on AlN buffer, but the parameters window for obtaining such growth is very narrow compared to growth on miscut samples and no detailed data on these samples has yet been collected.) The dislocation densities deduced from EBIC correspond reasonably with the previously reported high resolution X-ray diffraction data for the studied samples [14,16]. Fig.…”

Section: Resultssupporting

confidence: 89%

“…[25,33]). The dislocation density in the on-axis N-polar sample C is considerably higher than in the Ga-polar sample A judging by the HRXRD data (the full width at half maximum for asymmetric (10 1 1) reflection increased from 550 arcseconds for Ga-polar to 730 arcseconds for N-polar [14,16]), which could be related to the enhanced concentration of the dominant 0.6 eV electron traps. However, for the off-axis N-polar sample the dislocation densities are comparable to the Ga-polar sample, hence the dominant 0.9 eV traps in N-polar DLTS spectra are probably not related to dislocations per se.…”

Section: Discussionmentioning

confidence: 88%

“…The nitrogen-polar films were grown after subjecting the substrates to nitridization at 950 • C in ammonia and depositing either a low temperature (600 • C) GaN or more high temperature (1150 • C) AlN nucleation layers. The substrate was either on-axis (0 0 0 1) or 2 • and 4 • miscut towards the [11][12][13][14][15][16][17][18][19][20] direction. The thickness of the films was 0.8-1 m. For comparison, a 1.6 mthick undoped Ga-polar film was grown on on-axis substrate using high temperature hydrogen annealing with subsequent deposition of low temperature (510 • C) GaN buffer.…”

Section: Methodsmentioning

confidence: 99%

“…The structure of the films studied in this paper is described in Table 1. A detailed description of the growth procedure and structural characteristics of the films can be found in the earlier work [14,16].…”

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

Polyakov

Smirnov

Говорков

et al. 2010

Materials Science and Engineering: B

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Section: Resultssupporting

confidence: 89%

Section: Discussionmentioning

confidence: 88%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

Polyakov

Smirnov

Говорков

et al. 2010

Materials Science and Engineering: B

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“…Earlier, N-face GaN was obtained generally by nitriding Al 2 O 3 substrate or heavy doping Mg. Sun et al obtain a N-face GaN by nitriding Al 2 O 3 substrate at high temperature [3], while Vennegues et al found that during the GaN epitaxial growth, heavy Mg doping can promote Mg adsorption atoms to combine with N atoms, destroyed the original stacking sequence, then formed the inversion region in GaN epilayer, thus obtained a N-face GaN [4]. In addition, N-face GaN can also be obtained on the C face SiC.…”

Section: Introductionmentioning

confidence: 99%

Research on N-face GaN for solar cells based on MOCVD method

Yu¹,

Sui²,

Huang³

et al. 2014

Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science

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The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

Chen

Shi

Zhang

et al. 2021

Adv Elect Materials

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is restricted by the intrinsically large lattice and thermal mismatch between the epilayer and foreign substrate, which induces a mass of dislocations and the strong residual stress. [8] Generally, the large stress in III-nitrides triggers the risk for epilayer crack and the high-density dislocations act as carrier recombination centers and leakage channels, which would both lower the device performance and degrade its uniformity for the mass production. Traditional buffer layers including low-temperature aluminium nitride (AlN) nucleation layer, [9] periodic superlattice structure, [10,11] and Al metal film [12] have been widely applied, however, the total residual stress in epitaxial systems remain unchanged. In other words, the mismatch-induced dislocation and stress are partially confined in the buffer layer, and thus the optimization of crystalline quality and residual stress for III-nitride epilayers is limited. Recently, the high-quality and stress-free III-nitrides epitaxy on 2D layers (including h-BN and graphene) are developed, which is socalled as van der Waals epitaxy. [13][14][15] This innovation relies on the excellent stability and weak van der Waals interlayer interaction of 2D insert layers, which fundamentally solves the trouble induced by the heteroepitaxy. As the trade-off, the atomic flatness surface and scarce dangling bonds of h-BN and graphene have made difficulties in III-nitride nucleation. Unless the insert 2D layers are broken or atom-doped by specific treatments, including plasma or in situ nitridation, the epitaxial III-nitride could be in a high crystalline quality with the coalescent surface. [16,17] Apart from the crystalline optimization of III-nitrides, it is known that the typical III-nitride with wurtzite crystalline structure has an inversion symmetry along the c-axis orientation, possessing two opposite polar faces of Ga-polar ([0001] direction) and N-polar ([0001] direction). [18] The spontaneous polarization vector of III-nitride is determined by the polarity orientation, and thus different types of charges would be generated. As a consequence, the optical as well as electrical properties of III-nitride can be adjusted by controlling the polarization orientation. Several works prove that the proper assembly of metal-polar and N-polar III-nitrides could invert High-quality and polarity-controlled III-nitride is crucial for realizing highperformance and new types of device designs with rich functionalities, but there are still many difficulties for obtaining N-polar III-nitrides till now. In this work, the van der Waals epitaxy of high-quality N-polar gallium nitride (GaN) is reported by innovatively inserting a thin MoS 2 layer. Due to the remission of thermal and lattice mismatch by the week van der Waals force in 2D MoS 2 insert layer, the N-polar GaN exhibits high crystalline quality and reduced residual stress. The proposed atom deposition kinetics for the van der Waals epitaxy of the polarity-controlled aluminium nitride nucleation layer and GaN epilayer on the MoS 2 l...

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N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Cited by 55 publications

References 26 publications

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

Research on N-face GaN for solar cells based on MOCVD method

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

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