N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

Bergbauer, Werner; Straßburg, Martin; Kölper, Ch.; Linder, N.; Röder, C.; Lähnemann, Jonas; Trampert, A.; Fündling, Sönke; Li, S.F.; Wehmann, H.-H.; Waag, A.

doi:10.1016/j.jcrysgro.2010.07.067

Cited by 49 publications

(45 citation statements)

References 12 publications

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“…They found that the H 2 concentration in the carrier gas play a critical role in shaping the morphology of GaN nanorods. 41,83 When pure N 2 as a carrier gas was used, only pyramidal structures were observed, which were terminated with six (10-11) planes (r-plane) ( Fig. 19(a)).…”

Section: B Mocvd Growthmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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Section: B Mocvd Growthmentioning

confidence: 99%

“…Continuous-flux growth of GaN nanorods on sapphire substrates requires proper carrier gas mixture and very low V/III ratio. 41,42,83 The defect and doping properties at these growth parameters need to be carefully studied in the future.…”

Section: Potential Problems and Difficulties Of Nanorod Based Ledsmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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“…Selective area growth of GaN NWs by metal organic chemical vapor deposition (MOCVD) is one of the most promising catalysts-free techniques. The growth of GaN NWs using a continuous-flow MOCVD has been reported [22,23]. But there is still a challenge to grow uniform GaN NWs with diameter of a few tens of nanometer by this method.…”

Section: Introductionmentioning

confidence: 99%

GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid

Chen

Lin

et al. 2015

Journal of Crystal Growth

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“…The control of height, diameter and morphology of the NRs was enabled by tuning growth parameters such as temperature and carrier gas composition [6][7][8].…”

Section: Contributedmentioning

confidence: 99%

Towards nanorod LEDs: Numerical predictions and controlled growth

Kölper

Bergbauer

Drechsel

et al. 2011

Phys. Status Solidi C

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We present a numerical optimization of nanorod geometries with respect to the optical properties of an electrically driven LED emitting in the green spectral range. It is shown that an overall Purcell enhancement as well as directional emission can be achieved at an emission wavelength of 550 nm with nanorods of 110 nm radius. Position‐controlled growth on patterned substrates demonstrates that the required dimensions are accessible by varying growth parameters and growth time in a large volume MOVPE reactor. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

Cited by 49 publications

References 12 publications

GaN based nanorods for solid state lighting

GaN based nanorods for solid state lighting

GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid

Towards nanorod LEDs: Numerical predictions and controlled growth

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