n
                  +
              -
              GaN
           formed by Si implantation into <i>p</i>-GaN

Sheu, Jinn-Kong; Tun, Chun-Ju; Tsai, Ming Shann; Lee, Cheng-Chung; Chi, Gou–Chung; Chang, Shoou−Jinn; Su, Yan–Kuin

doi:10.1063/1.1432118

Cited by 54 publications

(10 citation statements)

References 18 publications

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“…Details of the growth conditions can be found elsewhere. [9][10][11][12][13][14][15][16][17] The InGaN/GaN MQW LED structure consists of a 30-nm-thick, GaN-nucleation layer grown at a low temperature of 560°C; a 4-mthick, Si-doped, n-GaN-cladding layer; an InGaN/ GaN MQW active region; a 50-nm-thick, Mg-doped, p-Al 0.15 Ga 0.85 N-cladding layer; and a 0.25-m-thick, Mg-doped, p-contact layer. The InGaN/GaN MQW active region consists of five pairs of 3-nm-thick, In 0.05 Ga 0.95 N-well layers and 12-nm-thick, GaNbarrier layers.…”

Section: Methodsmentioning

confidence: 99%

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Kuo

Chang

et al. 2003

Journal of Elec Materi

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The In 0.05 Ga 0.95 N/GaN, In 0.05 Ga 0.95 N/Al 0.1 Ga 0.9 N, and In 0.05 Ga 0.95 N/Al 0.18 Ga 0.82 N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al 0.1 Ga 0.9 N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximumoutput intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al 0.1 Ga 0.9 N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al 0.18 Ga 0.82 N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

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Section: Methodsmentioning

confidence: 99%

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Kuo

Chang

et al. 2003

Journal of Elec Materi

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“…[13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] Briefly, trimethylaluminum, trimethylgallium, trimethylindium, and ammonia were used as aluminum, gallium, indium, and nitrogen sources, respectively. Biscyclopentadienyl magnesium (CP 2 Mg) and disilane (Si 2 H 6 ) were used as the p-type and n-type doping sources, respectively.…”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Chang

et al. 2003

Journal of Elec Materi

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Nitride-based light-emitting diodes (LEDs) with Si-doped n ϩ -In 0.23 Ga 0.77 N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 ϫ 10 Ϫ2 ⍀-cm 2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 ϫ 10 0 ⍀-cm 2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP 2 Mg flow rate when we grow the underneath p-type GaN layer. The LEDoutput intensity was also found to be larger for samples with the SPS structure.

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“…However, very limited studies have been made on combined behaviour of Si implantation into Mg-doped p-type GaN as it is used in a GaN MOS-FET device. Electrical characterization of 0.6-µm-deep Si implantation was done by Sheu et al, who showed 27% of activation at 1000 °C [3]. Diffusion of Si in p-type GaN during annealing was studied by Pan et al [4].…”

mentioning

confidence: 99%

Study of Si implantation into Mg‐doped GaN for MOSFETs

Ostermaier

Ahn

Potzger

et al. 2010

Phys. Status Solidi (c)

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In this paper we focus on activation and diffusion during annealing of silicon after implantation into Mg‐doped GaN epitaxial layers. The Si diffusion was analyzed for different capping materials and compared to an uncapped sample. Investigation of the Si concentration obtained from secondary ion mass spectroscopy (SIMS) and comparison with calculation revealed several diffusion constants. Different diffusion behaviours at the surface were detected for different Si concentrations around the solubility of Si in GaN. Further, we found similar Si activation efficiencies in GaN for high and low fluences, after taking into account the compensation of electrons by the p‐type background doping. In addition, we investigated the insulation between Si implanted islands in p‐type GaN and the effect of additional Ar+ implantation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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n + - GaN formed by Si implantation into p-GaN

Cited by 54 publications

References 18 publications

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Study of Si implantation into Mg‐doped GaN for MOSFETs

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