N, H Dual‐Doped Black Anatase TiO₂ Thin Films toward Significant Self‐Activation in Electrocatalytic Hydrogen Evolution Reaction in Alkaline Media

Abstract

Hydrogen is considered to be a very promising clean energy carrier that is expected to play a pivotal role in energy applications in the near future. [1,2] Researchers around the globe are therefore putting serious efforts to find efficient, scalable, inexpensive, and nonprecious metal-based materials/ electrodes to produce hydrogen on an industrial scale. Specifically, the production of hydrogen from water via an electrochemical process involving hydrogen evolution reaction (HER) in different alkaline/acidic media has been receiving enormous attention from the scientific community due to several specific benefits offered by this approach, as discussed in the literature. [3][4][5] Among the available materials choices of electrocatalysts, the transition metal oxides (TMOs) are considered one of the prominent materials due to their high chemical stability, rich chemistry, earth abundance, and therefore low cost, availability of easy synthetic routes, and environmentally friendly character. [6,7] These characteristics could potentially facilitate the eventual replacement of more

Semiconductor–Semimetal 2D/3D MoS2/SrRuO3(111) TMD/TMO Heterojunction-Based ReRAM Devices

“…Quantitatively, the EFM phase shift is directly related to the local surface potential as described in eq . normalΔ ϕ = prefix− arc sin [ Q 2 k normald 2 C d z 2 ( V tip − V surface ) 2 ] where Δϕ is the phase shift, Q is the quality factor, k is the force constant of the cantilever, d 2 C normald z 2 is the second derivative of the capacitance between the sample and the probe as a function of the vertical distance, V tip is the DC bias applied to the tip, and V surface is the local surface potential on the sample surface . To estimate the local surface potential variation in FL and BL MoS 2 /SRO heterostructures, a plot of phase shifts at different biases between the film and the tip, measured by EFM phase, with a fixed lift height of 50 nm was obtained and fitted with the least-squares measurement to the aforementioned equation as shown in Figure B,C.…”

“…where Δϕ is the phase shift, Q is the quality factor, k is the force constant of the cantilever, is the second derivative of the capacitance between the sample and the probe as a function of the vertical distance, V tip is the DC bias applied to the tip, and V surface is the local surface potential on the sample surface. 33 To estimate the local surface potential variation in FL and BL MoS 2 /SRO heterostructures, a plot of phase shifts at different biases between the film and the tip, measured by EFM phase, with a fixed lift height of 50 nm was obtained and fitted with the least-squares measurement to the aforementioned equation as shown in Figure 4B,C. All of the curves are parabolic, which confirms the proportional interaction variation with (V tip − V surface ) 2 which is indicative of contact potential difference (CPD) between the tip and the surface.…”

Highly Efficient Oxygen Electrode Obtained by Sequential Deposition of Transition Metal-Platinum Alloys on Graphene Nanoplatelets

“…The presence of defects (e.g., point, line, plane, or volume defects) in the crystal structure results in the variation of material properties, including electrical and chemical activity [41,42]. The local electronic state of the catalyst can be redistributed, affecting the adsorption energy of the intermediate species.…”

Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application

“…Pulsed laser deposition (PLD) is a unique stoichiometry-transferring single-target thin film deposition technique that allows the growth of multi-functional, phase tunable, and stable thin-film growth, with the possibility of ambient control to achieve non-metal doping (with N, S, O) and pressure control to realize vacancy doping ( Parmar et al, 2021b ). The substrate temperature is another key parameter that can enable film quality, dopant, and defect control.…”