N-induced interfacial roughness and defects in ultrathin Si oxynitride layers

Miyata, Noriyuki

doi:10.1109/iwgi.2001.967570

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537)

DOI: 10.1109/iwgi.2001.967570

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N-induced interfacial roughness and defects in ultrathin Si oxynitride layers

Noriyuki Miyata¹

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N-induced interfacial roughness and defects in ultrathin Si oxynitride layers

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References 5 publications

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