nInP flat band potential: A pH probe in nonaqueous and mixed solvents?

The pH response of the InP/liquid ammonia interface at 223K: A pure nernstian behavior

“…The more obvious expression of this interaction is observed through the V fb vs. pH dependencies that are observed for most of the semiconductors. For III-Vs, it is reported that acid-base interactions play an important role in the interface building [1,2].…”

“…Depending on the SC, constant variations can be detected in the whole pH range or in partial pH ranges as well in aqueous solvent [1] as in non-aqueous solvent [2]. The V fb dependency with the pH is directly linked to an evolution of the potential drops through the Helmholtz layer which is ruled by the local acid-base equilibrium [1], evolution which is associated to the charge balance inside the interface.…”

“…In the literature, lot of examples of acid-base equilibrium at the semiconductor interface are related to an oxide (or hydroxide) surface [1][2][3][4][5][6] interface in aqueous solvents. This is obviously the case of semiconductor oxides like ZnO, TiO 2 , SnO 2 , WO 3 , where the interaction of their surfaces sites with H 3 O + or OH − , modified the structure of the electrical double layer as the pH of the solution change [1].…”

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

“…Many semiconductors were actually sensitive to the variation of acid-base equilibrium. [3][4][5][6][7][8][9][10][11][12] For III-V semiconductors such as binary (GaAs 3,5 or GaP 6,7 ) or ternary 8 compounds, the acid-base equilibrium was complicated by the specific adsorption sites which induced localized charges on the surface. 13 Previous works have shown a quasi Nernstian variation of the flatband potential on n-InP for (100) 14 and (111) faces 13 over the whole pH range in aqueous medium and also in non aqueous medium such as acetonitrile 15 and liquid ammonia.…”

“…13,18 In this paper acid-base equilibrium were further discussed on undoped n-InP in which the low doping level led to a space charge region strongly different as compared to high doped n-InP. 9,[13][14][15][16]18 This was particularly true in terms of surface electrical field, charge, capacitance, layer of the space charge region. 1,2,19 As a consequence, undoped n-InP exhibited a wider range of interfacial polarization avoiding faradaic transfer at the interface SC/electrolyte.…”