N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

Koksaldi, Onur S.; Haller, J. Robert; Li, Haoran; Romanczyk, Brian; Guidry, Matthew; Wienecke, Steven; Keller, S.; Mishra, Umesh K.

doi:10.1109/led.2018.2834939

Cited by 83 publications

(38 citation statements)

References 25 publications

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“…Aluminium gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) are widely used in high-power and high-frequency applications due to their superior characteristics based on the unique physical properties of III-nitride materials. The AlGaN/GaN heterostructures can be grown on sapphire, silicon, silicon carbide, and native GaN substrates [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. While sapphire and silicon substrates are the most cost-effective, the best characteristics are achieved on transistors fabricated on silicon carbide (SiC) and GaN substrates.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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“…VER the past decade, III-nitride high electron mobility transistors (HEMTs) have been demonstrating outstanding power and frequency performance, which outperforms their Si and GaAs counterparts in the high power switching application domain. Current gain cut-off frequency (fT) of 300 GHz and breakdown voltage of over 2,000 V have been demonstrated [1,2]. Nevertheless, the overall performances of III-nitride HEMTs are still far from their theoretical limits mostly due to the unavailability of a native substrate.…”

Section: Introductionmentioning

confidence: 99%

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Sanyal

Lin

Wan

et al. 2021

IEEE J. Electron Devices Soc.

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“…The use of AlN nucleation layers [25,27,28] and pre-treatment of substrate surfaces [29][30][31], have been demonstrated to enable high-quality GaN layers on SiC. Applying these approaches, high quality GaN-based devices on SiC have been demonstrated [14,[32][33][34].…”

Section: Introductionmentioning

confidence: 99%

“…The cap typically has a wider bandgap to reduce the tunneling. Recently, N-polar GaN HEMTs exhibiting a record breakdown voltage over 2000 V combined with low dynamic on-resistance fabricated on epi-layers grown by metal-organic chemical vapor deposition (MOCVD) technique on sapphire substrates were reported[33]. Furthermore, high-performance HEMTs are achieved by employing a heterostructure with GaN/InGaN composite channel and superlattice back barrier[65,66].…”

mentioning

confidence: 99%

Hot-wall MOCVD of N-polar group-III nitride materials

Zhang

2021

Linköping Studies in Science and Technology. Licentiate Thesis

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Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications.Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). This makes III-nitride materials suitable for high-efficient and energy-saving optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes (LDs). The Nobel Prize in Physics 2014 was awarded for the invention of efficient GaN blue LEDs, which further accelerated the research in the field of group III-nitride materials. GaN and related alloys are also suitable for high-temperature, high-power and high-frequency electronic devices with performance that cannot be delivered by other semiconductor technologies such as silicon (Si) and gallium arsenide (GaAs). For example, GaN-based high electron mobility transistors (HEMTs) have been widely adopted for radio frequency (RF) communication and power amplifiers, high-voltage power switches in radars, satellites, and wireless base stations for 5G.Recently, nitrogen (N)-polar group-III nitrides have drawn much attention due to their advantages over their metal-polar counterparts in e.g. HEMTs. These include feasibility to fabricate ohmic contacts with low resistance, an enhanced carrier confinement with a natural back barrier, and improved device scalability. Despite intensive research, the growth of micrometer-thick high-quality N-polar GaN based materials remains challenging.One of the major problems to develop device-quality N-polar nitrides is the high surface roughness, which results from the formation of hexagonal hillocks or step-bunching.Another significant hurdle is the unintentional polarity inversion, which reduces the crystalline quality and prohibits device fabrication.This licentiate thesis focuses on the development of N-polar AlN and GaN heterostructures on SiC substrates for HEMT RF applications. The overall aim is to exploit the advantages of the hot-wall MOCVD concept to grow high-quality N-polar HEMT structures for higher operational frequencies and improved device performance. In order to achieve this goal, special effort is dedicated to understanding the effects of growth conditions and substrate orientation on the structural properties and polarity of AlN, GaN and AlGaN grown by hot-wall MOCVD. N-polar AlN nucleation layers (NLs) with layer by layer growth mode and step-flow growth mode can be achieved on on-axis and 4 • offaxis SiC (0001), respectively, by carefully controlling V/III ratio and growth temperature. Utilizing scanning transmission electron microscopy (STEM) we have established a comprehensive picture of the atomic arrangements, local polarity and polarity evolution in AlN, Mao, my KING, thank you for your endless support and love. You are also a super father! We are all happy under your rule :) Anna...

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N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

Cited by 83 publications

References 25 publications

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

Hot-wall MOCVD of N-polar group-III nitride materials

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