N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density

Romanczyk, Brian; Li, Weiyi; Guidry, Matthew; Hatui, Nirupam; Krishna, Athith; Wurm, Christian; Keller, S.; Mishra, Umesh K.

doi:10.1109/led.2020.3022401

Cited by 35 publications

(16 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Optimizing GaN HEMTs for high-breakdown tends to also compromise the gate-drain capacitance parasitics that impact millimeter-wave performance. Recent work on N-polar GaN may offer new device physics for millimeter-wave operation [21]. Above 250 GHz, the InP HBT and GaAs mHEMT stand out as the only technologies that generate reasonable output power.…”

Section: Theoretical Comparisons Against Published Workmentioning

confidence: 99%

Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

Buckwalter¹,

Rodwell²,

Ning³

et al. 2021

ITU-J FET

View full text Add to dashboard Cite

This paper reviews the requirements for future digital arrays in terms of power amplifier requirements for output power and efficiency and the device technologies that will realize future energy-efficient communication and sensing electronics for the upper millimeter-wave bands (100-300 GHz). Fundamental device technologies are reviewed to compare the needs for compound semiconductors and silicon processes. Power amplifier circuit design above 100 GHz is reviewed based on load line and matching element losses. We present recently presented class-A and class-B PAs based on a InP HBT process that have demonstrated record efficiency and power around 140 GHz while discussing circuit techniques that can be applied in a variety of integrated circuits.

show abstract

Section: Theoretical Comparisons Against Published Workmentioning

confidence: 99%

Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

Buckwalter¹,

Rodwell²,

Ning³

et al. 2021

ITU-J FET

View full text Add to dashboard Cite

show abstract

“…The lack of high quality N-polar GaN hinders the development of Npolar GaN-based devices. In the recent years, N-polar GaN with an atomic smooth surface and reduced defects grown by metal organic chemical vapor deposition (MOCVD) has been reported by researchers [17][18][19][20], and the N-polar high electron mobility transistors (HEMTs), ultraviolet LEDs with superior performance have also been designed [21][22][23][24][25]. However, seldom experimental reports could be found for the investigation of N-polar red LEDs [10].…”

Section: Introductionmentioning

confidence: 99%

Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the “Green Gap” Range

Jiang

Jia

et al. 2022

IEEE Access

View full text Add to dashboard Cite

The low luminous efficiency of indium gallium nitride (InGaN) light-emitting diodes (LED) in the "green gap" range has been a long unsettled issue confounding the researchers. One of the main obstacles comes from the intrinsic polarization field in the incumbent Ga-polar LEDs (Ga-LEDs), where the polarization field will bend the energy band thus reducing the radiative recombination efficiency. The scenario will become different when we reverse the polarization field with the adoption of N-polar GaN, which should be a promising candidate to obtain LEDs with high luminous efficiency in the "green gap" range. In this study, the optical and electronic performances of InGaN LEDs in the "green gap" range with N-and Ga-polar have been numerically investigated. The results demonstrate that the light-output power of N-polar LED (N-LED) is ~1.69-fold higher than that of Ga-LED at a current density of 1250 A/cm 2 , thus leading to a significantly improved internal quantum efficiency. Meanwhile, the turn-on voltage of N-LED is lowered by ~17.3% compared to that of Ga-LED. As revealed by the energy band diagram, the superior optoelectronic performance of N-LED is mainly attributed to the stronger carrier confinement in the active region and the lower carrier injection barriers. This study suggests the prospective realization of high luminous efficiency InGaN LEDs in the "green gap" range by the implementation of N-LEDs.INDEX TERMS Green gap, Light-emitting diodes, light-out power, N-polar, turn-on voltage

show abstract

“…With ultra-scaled semiconductor devices, self-heating is a common problem that makes thermal management of electronics at every possible level essential for sustaining higher power densities in almost all applications, including computation, 5G/6G, and power electronics. [1][2][3][4] Self-heating under operating conditions leads to increased junction temperatures. The elevated channel temperature degrades device performance, by reducing channel mobility, which further increases the self-heating due to increased channel resistance, thus setting were introduced to the chamber and optimized to enhance sp 2 etching at lower temperatures and to promote sp 3 formation.…”

Section: Introductionmentioning

confidence: 99%

“…To effectively nucleate and simultaneously decrease the re-nucleation rate to form larger grains, a combination of sample #B 1 and #B 2 growth parameters were used to achieve the results shown in Figure 2d,e for sample #B 3 . Using a relatively higher O 2 concentration right after the high re-nucleation stage makes the etching and growth comparable which reduces sp 2 carbon formation and at the same time minimizes the possibility of substrate damage (5-3%CH 4 , 1-2%O 2 ).…”

mentioning

confidence: 99%

Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Malakoutian

Zheng

Woo

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

The ever-increasing power density is a major trend for electronics applications from dense computing to 5G/6G networks. Joule heating and resulting high temperature in the device channel due to the increased power density results in performance degradation and premature failure. Diamond integration near the hot spot can spread the heat by increasing the heat transfer coefficient. Diamond is mostly grown at high temperatures (700-1000 °C), which limits its integration with many semiconductor technologies. Here, a high-quality 400 °C-diamond by modifying the gas chemistry at different nucleation stages, with a sharp sp 3 Raman peak (FWHM≈6.5 cm −1 ) and high phase purity (97.1%), similar to 700 °C-diamond (>98%) is demonstrated. An average grain size of 650 nm with a thickness of 790 nm corresponding to an anisotropy ratio of 1.21 at 400 °C close to the best-reported of 1.12 at 700 °C is achieved. This near-isotropic diamond exhibits a relatively high thermal conductivity of ≈300 W m −1 K −1 and a thermal boundary resistance as small as only 5 m 2 K G −1 W −1 (on SiO 2 and Si 3 N 4 ). Achieving such a high-quality diamond at 400 °C demonstrates the possibility to grow the diamond on a wide range of semiconductors including Si, InP, Ga 2 O 3 , SiC, and GaN where SiO 2 or its variations, and Si 3 N 4 are commonly used dielectrics.

show abstract

N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density

Cited by 35 publications

References 14 publications

Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

Superior Optoelectronic Performance of N-Polar GaN LED to Ga-Polar Counterpart in the “Green Gap” Range

Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

Contact Info

Product

Resources

About