N-polar GaN p-n junction diodes with low ideality factors

Nomoto, Kazuki; Xing, Huili Grace; Jena, Debdeep; Cho, Yong-Jin

doi:10.35848/1882-0786/ac6ec5

Cited by 7 publications

(4 citation statements)

References 37 publications

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“…For the N-polar Schottky diode, the reverse leakage current is 5.1 × 10 −6 A/cm 2 , and the R on is 314 mΩ•cm 2 . Note that the on-state resistances of our samples are higher than those reported in other works in the literature [14,33,34], possibly originating from the absence of a thermal annealing process for the ohmic contacts. Nevertheless, the purpose of this work is to provide a comparative study on the electrical behaviors between Ga-and N-polar Schottky contacts.…”

Section: Resultscontrasting

confidence: 62%

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Yu,

Dai,

Tang

et al. 2024

Electronics

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We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–voltage (I–V) characteristics of the Ga- and N-polar GaN Schottky contact with and without SiNx was established. The insertion of SiNx helps in reducing the reverse leakage current for both structures, even though the leakage is still higher for N-polar GaN, consistent with the Schottky barrier height calculated using X-ray photoelectron spectroscopy. To optimize the electric property of the N-polar device, various substrate misorientation angles were adopted. Among the different misorientation angles of the sapphire substrate, the GaN MIS Schottky barrier diode grown on 1° sapphire shows the lowest reverse leakage current, the smoothest surface morphology, and the best crystalline quality compared to N-polar GaN grown on 0.2° and 2° sapphire substrates. Furthermore, the mechanism of the reverse leakage current of the MIS-type N-polar GaN Schottky contact was investigated by temperature-dependent I–V characterization. FP emissions are thought to be the dominant reverse conduction mechanism for the N-polar GaN MIS diode. This work provides a promising approach towards the optimization of N-polar electronic devices with low levels of leakage and a favorable ideality factor.

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Section: Resultscontrasting

confidence: 62%

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Yu,

Dai,

Tang

et al. 2024

Electronics

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“…ZnO and GaN are also important polar materials finding application in various fields. [44][45][46][47][48] The electrochemical nanostructuring of ZnO is less studied because of its low chemical stability. To fill this gap, a cost-effective approach via anodization of the O-face or the Zn-face was proposed for controlled micro-and nanostructuring of polar ZnO crystals, and their luminescence properties were investigated.…”

Section: Optical and Photonic Properties Of Wide-bandgap Semiconducto...mentioning

confidence: 99%

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Monaico

Ursaki

et al. 2023

Physica Rapid Research Ltrs

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Porous semiconductor compounds represent a class of materials which is under an intense research focus over the last years. Herein, morphologies and topologies produced by anodization in binary semiconductor compounds having various bandgaps and crystallographic orientations are demonstrated with a focus on technological procedures applied for generating arrays of pores with a controlled design. The mechanism of pores growth under the photoresist masks is discussed and the connection between the design of the mask and the architecture of the produced porous structure is disclosed. The evolution of physical characteristics of the materials such as luminescence, optical, photonic, vibrational, hydrophilic, and hydrophobic properties as a result of anodization is investigated. Investigations are performed by means of scanning electron microscopy, photoluminescence and cathodoluminescence spectroscopy, and contact angle measurements. Some possible practical applications of the proposed technological approaches and the produced porous structures are briefly discussed.

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“…[6][7][8][9][10] In the case of n-type GaN on the Ga-polar GaN surface (0001), it has been observed that the carrier concentration is over 1 × 10 20 cm −3 using n-type dopants such as Si or germanium (Ge). 11) On the contrary, several GaN devices, such as vertical GaN power devices, 5,12,13) and N-polar high-electron-mobility transistors, 14,15) require an ohmic contact on the N-polar surface ( ̅ ) 000 1 . For vertical power devices, it is typically necessary to make contact on the N-polar GaN surface, i.e., the backside of the GaN ( ̅ ) 000 1 , substrate with a carrier concentration of around 1 × 10 18 cm −3 directly.…”

mentioning

confidence: 99%

Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

Yamada,

Shirai,

Kobayashi

et al. 2024

Appl. Phys. Express

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We developed a low-temperature ohmic contact formation process for N-polar GaN surfaces. Specific-contact-resistances of 9.4 × 10−5 and 2.0 × 10−5 Ω·cm2 were obtained using Ti/Al metal stacks on heavily-germanium-doped GaN films, which were deposited at 500 °C and 600 °C using a radical-assisted reactive sputtering method, respectively. The electrode sintering temperature was as low as 475 °C. Carrier concentrations for the 500 °C and 600 °C samples were 2.6 × 1020 and 1.8 × 1020 cm−3, respectively. These results suggest that this method is highly effective in reducing the contact resistance of GaN devices with low thermal budgets.

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N-polar GaN p-n junction diodes with low ideality factors

Cited by 7 publications

References 37 publications

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

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