n-PS/a-Si:H heterojunction for device application

Prabakaran, R.; Águas, Hugo; Fortunato, Elvira; Martins, Rodrigo; Ferreira, I.

doi:10.1016/j.jnoncrysol.2007.09.115

Cited by 7 publications

(4 citation statements)

References 18 publications

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“…Reports in the literature indicate that surface modification of Si nanostructures can drastically change the photoluminescence intensity. Studies by Prabakaran et al have shown that deposition of an a-Si/H film on porous Si (PSi) resulted in quenching of PL, and this was attributed to passivation of the radiative centers on the PSi surface . Rogozhina et al have shown that Si nanoparticles passivated with butyl amine exhibit intense PL .…”

Section: Resultsmentioning

confidence: 99%

Chemistry of Silicon Nanocrystal Surfaces Exposed to Ammonia

Salivati¹,

Shuall²,

McCrate³

et al. 2010

J. Phys. Chem. C

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Silicon nanocrystals (NCs) 8-10 nm in diameter are grown on SiO 2 surfaces in an ultrahigh-vacuum chamber using hot wire chemical vapor deposition. These NCs are subjected to varying exposures of deuterated ammonia (ND 3 ). The surface chemistry of Si NCs is studied using X-ray photoelectron (XP) spectroscopy and temperature-programmed desorption (TPD). The dissociative adsorption of ND 3 on Si NCs results in the formation of ND 2 species prior to TPD, and Si 3 N (nitride) formation is observed after TPD. D 2 desorption is observed only from the monodeuteride species at 780 K. In separate experiments, a hot tungsten filament is used to predissociate ND 3 before adsorption on the NC surface. XP spectra reveal that ND 2 species form initially, and as the dose is increased, ND species dominate. After TPD, a Si x N y species is observed. D 2 desorption is observed from the mono-, di-, and trideuteride species when ND 3 is predissociated. Irrespective of the technique used for dosing ammonia, TPD spectra do not contain any ND 3 fragments, indicating that the ND 2 species are not thermally stable on the NC surface. The photoluminescence (PL) emitted from Si NCs (diameter ∼ 4.1 nm) is reported for an excitation wavelength of 405 nm. PL is observed only when the hot filament is used to predissociate ND 3 , and this can be attributed to the presence of di-and trideuteride species on the nanocrystal surface, which results in better passivation.

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Section: Resultsmentioning

confidence: 99%

Chemistry of Silicon Nanocrystal Surfaces Exposed to Ammonia

Salivati¹,

Shuall²,

McCrate³

et al. 2010

J. Phys. Chem. C

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“…The Table 1, shows the different characteristics of the cells in comparison with the results already reported [28][29][30].…”

Section: Photovoltaic Propertiesmentioning

confidence: 89%

“…This method has the advantage of forming porous silicon to achieve low manufacturing cost to be later used for mass production of commercial solar cells [5]. After achieving improvement in the parameters and the photovoltaic cell efficiency, various technologies were proposed such as the nanostructured antireflection layers [6], textured layers [7], porous silicon (IG-PS structure) [8] and hybrid solar cells [9]. These techniques generally require more than two different materials and many manufacturing technology steps in several stages.…”

Section: Introductionmentioning

confidence: 99%

Influence of etching parameters on optoelectronic properties of c-Si/porous silicon heterojunction – application to solar cells

Bechiri

Zerdali

Rahmoun

et al. 2013

Eur. Phys. J. Appl. Phys.

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Thin layers of nanoporous silicon PS were synthesized by anodic etching, in order to develop photovoltaic cells. We proposed a diluted concentration of hydrofluoric acid with different etching current densities (1, 3, 5 mA/cm 2) on a fairly short time anodization. Observations by scanning electron microscope, electrical measurements and optical measurements revealed that the structural properties of PS layers depended on strong conditions of prints. The reverse and forward component of the I-V characteristics showed an appropriate method to explore and extract the parameters of the diode ideality factor n. The optimum conditions of formation of PS were: HF concentration of 1% and an etching current density of 1 mA/cm 2. Unlike silicon, which has a low absorption of short visible wavelengths, it was shown that the PS had wide energy gap of ≈ 2 eV, and a marked improvement in the absorption between 400 and 600 nm. This property has been used to optimize the response of the solar cell Ni/PS/c-Si. Efficiency performance close to 4.2% was obtained with a V oc of 400 mV, and fill factor of 46%. The solar cell exhibited better response than the reference cell Ni/c-Si. These results show that PS/c-Si heterojunction has a potential for photovoltaic applications.

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“…Generally, PS electrical properties are markedly changed when subjected to gas due to the high surface to volume ratio and its high reactive surface [1][2][3]. However, PS exhibits poor response under CO 2 gas exposure.…”

Section: Introductionmentioning

confidence: 99%