In this article, the authors present the work on emitter diffusion in crystalline silicon solar cell fabrication, and determine that phosphorus doping using phosphoric acid (H 3 PO 4 ) with dipping is convenient and cost effective. H 3 PO 4 was mixed with different solvents such as deionised water, ethanol, methanol and butanol. However, deionised water is hydrophobic to the silicon surface. The emitter layers were obtained by varying emulsion concentrations and diffusion temperatures. The sheet resistance of the prepared emitter layers was measured. The sheet resistance varied between 60 and 130 V/% using butanol as a solvent at 900uC for 5 min. Also, butanol as a solvent exhibited uniform sheet resistance over the wafer surface, compared to other solvents. The sheet resistance decreases as the annealing time and temperature was increased. Based on sheet resistance measurements it is evident that this method can be used for solar cell fabrication, and it is cost effective and easy to scale up.