N‐Type Conductive Ultrananocrystalline Diamond Films Grown by Hot Filament CVD

Mertens, M.; Mohr, Markus; Wiora, N.; Brühne, Kai; Fecht, Hans‐Jörg

doi:10.1155/2015/527025

Cited by 17 publications

(9 citation statements)

References 24 publications

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“…15 As the measuring temperature increases to 400 o C, the corresponding activation energy increases to 0.05-0.15 eV. 45 It is likely that p-type conductivity is induced by the H-terminated diamond grains, while GBs induce n-type conductivity after hydrogen bondings decomposed at higher annealing temperature, which explains the p-type to n-type conductivity conversion from as-deposited sample to sample 900-A. However, oxygen also induced an n-type conductive layer with an activation energy of about 0.32 eV in single crystalline diamond by ion implantation.…”

Section: (B)mentioning

confidence: 99%

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Coathup

et al. 2017

Applied Physics Letters

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The impedance spectroscopy measurements were used to investigate the separated contributions of diamond grains and grain boundaries (GBs), giving an insight of p-type to ntype conductivity conversion in O + -implanted ultrananocrystalline diamond (UNCD) films. It is found that both diamond grains and GBs promote the conductivity in O + -implanted UNCD films, in which GBs make at least half contribution. The p-type conductivity in O + -implanted samples is a result of H-terminated diamond grains, while n-type conductive samples is closely correlated to O-terminated O + -implanted diamond grains and GBs in the films. The results also suggest that low resistance of GBs is preferable to obtain high mobility n-type conductive UNCD film.

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Section: (B)mentioning

confidence: 99%

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Coathup

et al. 2017

Applied Physics Letters

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“…Ikeda et al [6] correlated the enhancement of electrical conductivity of nitrogen-doped UNCD films to the enlargement of ordering and fraction of sp 2 -carbon at the grain boundary. Mertens et al [7] have studied the electrical conductivity of nitrogen-doped UNCD films. Their results suggest that the n-type conduction depends on the structure and volume of the grain boundary.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Zkria

Abubakr

Sittimart

et al. 2020

Journal of Nanomaterials

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Diamond films are candidate for a wide range of applications, due to their wide band gap, high thermal conductivity, and chemical stability. In this report, diamond-based heterojunction diodes (HJDs) were fabricated by growing n-type nanocarbon composite in the form of nitrogen-doped ultrananocrystalline diamond/amorphous carbon (UNCD/a-C:H:N) films onto p-type Si substrates. X-ray photoemission and the Fourier transform infrared spectroscopies were employed to examine the contribution of nitrogen atoms from the gas phase into the deposited films. The results indicate the incorporation of nitrogen atoms into the grain boundaries of UNCD/a-C:H film by replacing hydrogen atoms. The capacitance- (C-V-f), conductance- (G/ω-V-f), and series resistance-voltage characteristics of the fabricated Pd/n-(UNCD/a-C:H:N)/p-Si HJDs were studied in the frequency range of 40 kHz-2 MHz. The existence of interface states (Nss) and series resistance (Rs) were attributed to the interruption of the periodic lattice structure at the surface of the fabricated junction as well as the defects on the (UNCD/a-C:H:N)/Si interface. By increasing the frequency (≥500 kHz), the Nss reveals an almost frequency-independent behavior, which indicates that the charges at the interface states cannot follow ac signal at higher frequency. The obtained results demonstrated that the UNCD/a-C:H:N is a promising n-type semiconductor for diamond-based heterostructure diodes.

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“…NH3 is preferred over N2 because of weaker N-H bond as compared to stronger NN bond of N2 under HFCVD reactor [10]. The reported N/C ratio in the feedstock is varied from as small as 0.1 to greater than 150 % for the growth of N doped diamonds [10][11][12][13][14][15][16][17][18][19][20][21]. The presence of N in feedstock significantly affect the growth mechanism, morphology, growth rate, grain size, chemical bonding at grain and GBs.…”

Section: Introductionmentioning

confidence: 99%

“…Further, the morphology and growth habit change due to the orientation dependent growth rate which results in texturing of diamond films [11,12,13,14,15,16]. Also, the presence of N in the feedstock increases the amount of H impurity incorporation in diamond during growth [17].…”

Section: Introductionmentioning

confidence: 99%

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

Ganesan¹,

Ajikumar²,

Srivastava³

et al. 2020

Diamond and Related Materials

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Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film.Pure and N doped nanocrystalline diamond films are synthesized on Si by hot filament chemical vapour deposition using NH3:CH4:H2 at different nominal N/C ratios viz. 0, 0.13, 0.35, 0.50 and 0.75 in feedstock. X-ray diffraction analysis reveal a systematic initial increase and then a decrease in crystallite size with N/C ratio in feedstock. Further, a monotonic increase in Raman line width and peak position of diamond band indicates that the compressive strain in diamond lattice increases as a function of N/C ratio upto 0.50. However, at higher N/C ratio of 0.75, the compressive strain gets relaxed a little and produces a lower strain. Furthermore, a unique Raman mode at 1195 cm -1 is observed corresponding to the C=N-H vibrations indicating a significant N concentration in the NCD films. In addition, visible and UV PL studies reveal the presence of several N-related colour centres with multiple emission lines in the range of 380 -700 nm. An optimally N doped diamond film grown at N/C ratio of 0.35 in feedstock shows a significant enhancement in room temperature PL emission at ~ 505 and 700 nm. This PL enhancement is attributed to H3 and other aggregates of N related defect centres, under 355 and 532 nm laser excitations respectively.

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N‐Type Conductive Ultrananocrystalline Diamond Films Grown by Hot Filament CVD

Cited by 17 publications

References 24 publications

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

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