n-Type Cu[sub 2]O by Electrochemical Doping with Cl

Han, Xiaofei; Han, Kunhee; Tao, Meng

doi:10.1149/1.3065976

Cited by 56 publications

(55 citation statements)

References 13 publications

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“…However, we note here that there is no change in the carrier density. On the other hand, the resistivity of the film grown on bare Si (10 6 X cm) is in the range of the value reported in the literature (&10 5 -10 8 ) X cm [28,29]. While the resistivity of the film grown with SLAE slightly reduced to &10 4 X cm due to enhancement in the crystal structure of the film.…”

Section: Resultsmentioning

confidence: 49%

The role of using seed-layer assisted electrodeposition method on the growth and the photovoltaic properties of p-Cu2O/n-Si heterojunctions

Elfadill

Hashim

Thabit

2014

J Mater Sci: Mater Electron

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A simple seed-layer assisted electro-deposition SLAE route has been successfully used to prepare a Cu 2 O film with a significant improvement in the crystalline quality, compactness and surface texture. This improvement was confirmed by studying the photo-luminescence emission properties and Raman spectroscopy of the Cu 2 O films grown with and without the SLAE route. The hall measurements reveal the enhancement in the hole mobility from 3.8 cm 2 /V s for the Cu 2 O films grown without using the SLAE route compared to 45 cm 2 /V s for the films grown by using the SLAE route. A detailed analysis of the J-V characteristics curve of the p-Cu 2 O/n-Si heterojunctions was performed. The dark J-V curves reveal the formation of p-n junction behavior. The photovoltaic parameters of p-Cu 2 O/n-Si heterojunctions exhibit an improvement in the p-Cu 2 O/n-Si solar cell efficiency from 0.05 to 0.31 % due to the adoption of the SLAE route.

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Section: Resultsmentioning

confidence: 49%

The role of using seed-layer assisted electrodeposition method on the growth and the photovoltaic properties of p-Cu2O/n-Si heterojunctions

Elfadill

Hashim

Thabit

2014

J Mater Sci: Mater Electron

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“…This theoretical result is also supported by various experimental results. [193][194][195] 6.2. Doping of Cu I -Based p-TCO…”

Section: N-type Dopingmentioning

confidence: 99%

A Review on Cu2O and CuI-Based p-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics

Nandy¹,

Banerjee

Fortunato³

et al. 2013

Rev Adv Sci Engng

115

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Cu I -based p-type semiconducting and transparent oxide materials have recently gained renewed interest for potential applications in energy-related devices. As a counter-part of n-type transparent oxides like ZnO, SnO 2 , Indium tin oxide etc., development of p-type transparent conducting oxides has provided a new dimension to the field of 'Transparent Electronics' for new-generation energy-efficient optoelectronic devices. An all-transparent p-n junction device can lead to the formation of a 'functional window' that would transmit the visible light yet generates electricity by the absorption of ultra-violet part. In this article, a comprehensive review on the recent developments and trends on Cu I -based p-type oxide material is presented. The origin of visible transparency and p-type conductivity within these types of oxides are discussed. The properties, defect mechanisms and syntheses of various Cu I -based p-type oxides, including the parent compound, Cu 2 O are discussed in details. Also, the applications of various Cu I -based p-type oxides in energy-related fields and optoelectronic devices are discussed comprehensively. Finally, the future trend of the Cu I -based p-type transparent conducting oxides in terms of syntheses and applications are proposed for potential usage in diverse fields and novel devices.

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“…Recognizing that oxygen vacancies contribute to p-type semiconductor behavior in Cu 2 O, more recent studies by Tao and co-workers [299,300] have prepared p-n homojunctions from Cu 2 O by controlling solution pH during cathodic film growth. A subsequent study by the same group reports n-type doping of Cu 2 O by adding a chlorine precursor (CuCl 2 ) to the deposition bath [301]. Another group also uses solution pH as a tool to prepare n-type Cu 2 O electrodes [302].…”

Section: Copper Oxide (Cu 2 O)mentioning

confidence: 99%