2016
DOI: 10.1039/c6tc01881e
|View full text |Cite
|
Sign up to set email alerts
|

n-Type doped transparent conducting binary oxides: an overview

Abstract: This article focuses on n-type doped transparent conducting binary oxides -namely, those with the general formula M x O y :D, where M x O y is the host oxide material and D is the dopant element. Such materials are of great industrial importance in modern materials chemistry. In particular, there is a focus on the search for alternatives to indium-based materials, prompted by indium's problematic supply risk as well as a number of functional factors. The important relationship between computational study and e… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

2
203
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 319 publications
(205 citation statements)
references
References 116 publications
2
203
0
Order By: Relevance
“…The sputtered polycrystalline ITO films, which are used in the TCO applications, showed the minimum resistivity of 0.15 mΩ cm. 23 However, the µ(RT) value of 100 cm 2 V 1 s 1 is much higher than that for such ITO films, which is quite advantageous for ensuring optical transparency. Although the Ge-doped samples showed slightly lower mobility because of their higher θ values compared with those of the Si-doped samples, the highest n(RT) of 5.1 × 10 20 cm 3 with a ρ(RT) of 0.20 mΩ cm was achieved by Ge doping.…”
Section: -5mentioning
confidence: 99%
“…The sputtered polycrystalline ITO films, which are used in the TCO applications, showed the minimum resistivity of 0.15 mΩ cm. 23 However, the µ(RT) value of 100 cm 2 V 1 s 1 is much higher than that for such ITO films, which is quite advantageous for ensuring optical transparency. Although the Ge-doped samples showed slightly lower mobility because of their higher θ values compared with those of the Si-doped samples, the highest n(RT) of 5.1 × 10 20 cm 3 with a ρ(RT) of 0.20 mΩ cm was achieved by Ge doping.…”
Section: -5mentioning
confidence: 99%
“…Intrinsic dopants can also be used, with oxygen vacancies the primary example. [6] Intrinsically, the Fermi level (E F ) lies in most known TCOs close to the conduction band facilitating extrinsic n-type doping. Such doping shifts E F inside the conduction band, forming a degenerate n-type semiconductor, which also leads to further widening of the optical band gap (E g ) following the Burstein-Moss relation: ∆E g ≈ N e 2/3 .…”
Section: Progress Reportmentioning
confidence: 99%
“…Other reported materials with TCO properties include titanium oxide (TiO 2 ) and calcium aluminate (12CaO⋅7Al 2 O 3 ). [42,43] Conventional TCOs are binary systems, mainly polycrystalline in nature and doped with halides, group XIII, or XV elements, [6] almost always forming n-type semiconductors. Recently, multi-compound oxides (e.g., IGZO, ZTO, IZO), [44] aiming at improved mechanical properties and thermal stability due to their amorphous nature, have also been widely studied and have electrical properties that are often on par with their polycrystalline counterparts.…”
Section: N-type Transparent Conductorsmentioning
confidence: 99%
See 1 more Smart Citation
“…Structural families of metal-oxides that have been commonly explored in the literature are ABO 3 pervoskites [1][2][3][4][5], layered Ruddelsden-Popper pervoskites [6][7][8], and spinel structures [9][10][11]. Metal-oxide materials can also be classified by their properties that can include superconductors [12][13][14][15], transparent conducting oxides [16][17][18][19][20], and photocatalysts [21][22][23][24][25][26]. Variations of compositions within homologous families of structures exhibit important structural transformations (i.e., structural distortions, polymorphism) which impact their optical properties (i.e., range of light absorption for photocatalysis).…”
Section: Introductionmentioning
confidence: 99%