n
          -type doping characteristics of O-implanted GaN

Nakano, Yoshitaka; Kachi, Tetsu; Jimbo, Takashi

doi:10.1116/1.1621652

Cited by 9 publications

(10 citation statements)

References 30 publications

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“…Figure 7a shows the influence of different ICP power treatments on ohmic contact at an RF power of 75 W. As ICP power increases from 150 W to 250 W, R C decreases slightly. According to the literature [34], the majority of the implanted O ions were present at an interstitial site in GaN, and consequently had not contributed to the formation of the O donor level. Therefore, excluding the donor-doping effect of O N introduced by oxygen plasma treatment, and there may be other mechanisms to reduce R C .…”

Section: Algan/gan Hemts DC Characteristicsmentioning

confidence: 99%

Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate

Wei

Kang

et al. 2021

Electronics

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The oxygen plasma surface treatment prior to ohmic metal deposition was developed to reduce the ohmic contact resistance (RC) for AlGaN/GaN high electron mobility transistors (HEMTs) on a high-resistive Si substrate. The oxygen plasma, which was produced by an inductively coupled plasma (ICP) etching system, has been optimized by varying the combination of radio frequency (RF) and ICP power. By using the transmission line method (TLM) measurement, an ohmic contact resistance of 0.34 Ω∙mm and a specific contact resistivity (ρC) of 3.29 × 10–6 Ω∙cm2 was obtained with the optimized oxygen plasma conditions (ICP power of 250 W, RF power of 75 W, 0.8 Pa, O2 flow of 30 cm3/min, 5 min), which was about 74% lower than that of the reference sample. Atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), and photoluminescence (PL) measurements revealed that a large nitrogen vacancy, which was induced near the surface by the oxygen plasma treatment, was the primary factor in the formation of low ohmic contact. Finally, this plasma treatment has been integrated into the HEMTs process, with a maximum drain saturation current of 0.77 A/mm obtained using gate bias at 2 V on AlGaN/GaN HEMTs. Oxygen plasma treatment is a simple and efficient approach, without the requirement of an additional mask or etch process, and shows promise to improve the Direct Current (DC)and RF performance for AlGaN/GaN HEMTs.

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Section: Algan/gan Hemts DC Characteristicsmentioning

confidence: 99%

Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate

Wei

Kang

et al. 2021

Electronics

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“…Unbound oxygen can diffuse into the defective material near the GaN/Al2O3 interface, changing its electrical properties [239]. However, the oxygen redistribution in O implanted GaN is not observed up to the temperature of 1200 • C [238,240]. Subsequent studies have shown that due to the high activation energy of oxygen diffusion in GaN ∼ 3.9 eV, the incorporated oxygen atoms exhibits low mobility even at the temperatures close to the melting point of the material [241].…”

Section: Oxygen Properties In Ganmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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“…9 Furthermore, we have demonstrated that improved Ge-doping characteristics in GaN have been achieved by N/Ge coimplantation for n-type doping, attaining activation efficiencies above 95%, compared with those of the conventional Ge implantation where only Ge dopant is used. 10 However, defects introduced by the Ge and/or N/Ge implantation have not yet been studied in detail. In general, implantationinduced defects limit the performance of the electronic devices.…”

Section: Defects In Nõge Coimplanted Gan Studied By Positron Annihilamentioning

confidence: 99%

“…For the conventional Ge-implanted GaN sample, the activation efficiencies were roughly estimated to be as low as 40% because of there being insufficient N atoms to maintain the GaN stoichiometry in the implanted region. 9,10 For the VEPAS measurements, using a monoenergetic positron beam, the Doppler broadening of the electronpositron annihilation ␥ rays ͑ϳ511 keV͒ was recorded at room temperature with a Ge detector as a function of incident positron energy E. A spectrum was measured for each value of E. The shape of the Doppler broadening spectrum was characterized by the conventional low and high electron momentum parameters S and W. 15 the Doppler broadening of the resultant annihilation ␥ rays. Therefore the level of the Doppler broadening is a measure of the momentum state of the electron that a positron annihilates.…”

Section: Defects In Nõge Coimplanted Gan Studied By Positron Annihilamentioning

confidence: 99%

Defects in N/Ge coimplanted GaN studied by positron annihilation

Nakano

Kachi

2002

Journal of Applied Physics

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We have applied positron annihilation spectroscopy to study the depth distributions and species of defects in N-, Ge-, and N/Ge-implanted GaN at dosages of 1×1015 cm−2. For all the implanted samples, Ga vacancies introduced by ion-implantation are found to diffuse into much deeper regions of the GaN layers during the implantation and to change into some other vacancy-type defects by the annealing at 1300 °C. In particular, markedly different defects turn out to be newly created in the electrically activated regions for both the Ge- and N/Ge-implanted samples after annealing, indicating that these new defects are probably associated with the presence of the implanted Ge dopant atoms.

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n -type doping characteristics of O-implanted GaN

Abstract: Dissociation of Al 2 O 3 (0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

Cited by 9 publications

References 30 publications

Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate

Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Defects in N/Ge coimplanted GaN studied by positron annihilation

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