N-type Doping Effect of Transferred MoS₂ and WSe₂ Monolayer

Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors

“…The sapphire/MoS 2 /PMMA substrate was subsequently immersed in an ammonia solution for one to two hours to separate the MoS 2 /PMMA film from the sapphire substrate. 43,44 After transferring the MoS 2 /PMMA film onto the Si/SiO 2 substrate, the PMMA protection layer was removed using acetone. The sample was then immersed in an N-methyl-2-pyrrolidone solution for wet cleaning to remove residues or contamination on the MoS 2 surface.…”