n-type doping of molecular beam epitaxial zinc selenide using an electrochemical iodine cell

Abstract

We report the use 01 an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy over a range of carrier concentrations from 10" to 1O"cm -3. The doping levels throughout the layers have been measured by electrochemical CY profiling and staircase doping structures have been used to calibrate the doping level in terms of the cell flux. Photoluminescence and Hall data confirm t h e growth of well-behaved n-type ZnSe.

N-type doping of zinc selenide using a silver iodide thermal effusion source

“…The three doping levels were obtained from cell temperatures of 200, 170 and 140 1C. The transition between each level is sharp, and is approximately 19 nm/decade; this is comparable with previous iodine profiles obtained from the electrochemical cell [3].…”

“…Work at Heriot-Watt has previously demonstrated the successful doping of ZnSe using an electrochemical iodine cell containing AgI as a solid-state electrolyte [3]. This source was developed to provide iodine at doping levels from UHV compatible materials and has been used for over a decade as the only source of n-type dopant in our laboratory.…”

On the Dopability of Semiconductors and Governing Material Properties

“…Light and dark shades of gray distinguish the band-gap value. Data are obtained from refs − , and for details, see Table S1 in the Supporting Information (SI).…”

Plasma-expansion induced absorption and refraction changes in ZnSe epilayers

“…Experiments were performed at room temperature on 2:5 mm thick MBE ZnSe epilayers grown onto a GaAs substrate [25]. For the SPTG experiments to be performed the GaAS substrate was removed by a wet-etching technique [26].…”