N‐type Doping of Organic‐Inorganic Hybrid Perovskites Toward High‐Performance Photovoltaic Devices

Zhang, Yue; Zhang, Congcong; Gao, Chun‐Hong; Li, Meng; Ma, Xing‐Juan; Wang, Zhao-Kui; Liao, Liang‐Sheng

doi:10.1002/solr.201800269

Cited by 24 publications

(21 citation statements)

References 54 publications

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“…Figure a shows the J – V curves measured under simulated AM 1.5G illumination (100 mW cm −2 ), and the device performance parameters are listed in Table 1 . The control device with the bare TiO 2 features an average PCE of 17.16% with a V OC of 1.06 V, a J SC of 22.91 mA cm −2 , and an FF of 72%, which is comparable to the results in literature . The device with PCBM interlayer has a PCE of 18.94%.…”

Section: Resultssupporting

confidence: 81%

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO₂ Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

Wang

Yang

et al. 2020

Adv Materials Inter

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As one common electron transport material for planar n‐i‐p perovskite solar cell, titanium dioxide (TiO2) compact layer has several challenging issues, such as surface hydroxyl groups, high defect density, and unmatched energy levels, causing severe energy loss and poor stability at contact. To solve these problems, the authors introduce a thin [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) interlayer doped with an air stable n‐type dopant, 3‐dimethyl‐2‐phenyl‐2,3‐dihydro‐1H‐benzoimidazole (DMBI) to modify the TiO2 surface. The state‐of‐the‐art characterizations demonstrate such modification significantly improves charge transfer at MAPbI3/TiO2 interface together with smaller energy level offset, leading to suppressed charge recombination. High‐quality perovskite film with larger crystal grain size grows on the n‐doped PCBM/TiO2 attributed to the better surface affinity. As a result, the average power conversion efficiency of perovskite solar cell exhibits a prominent improvement from 17.46% to 20.14%, with an enhancement in all device photovoltaic parameters. In addition, the stability of the device with n‐doped PCBM/TiO2 is much better than that of the control device with the bare TiO2 due to hydrophobicity nature of PCBM and low defect densities in the perovskite film and at the interface. This work indicates that many further device performance improvements should be conceivable by focusing on the perovskite interface.

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Section: Resultssupporting

confidence: 81%

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO₂ Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

Wang

Yang

et al. 2020

Adv Materials Inter

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“…Moreover, for the same positive gate voltage, the drain currents of the Pero‐pristine‐, Pero‐Th‐0.05‐, and Pero‐I‐0.1‐based devices increased gradually, indicating the enhancing effect of these n‐type dopants on the charge transporting ability. [ 49–50 ]…”

Section: Resultsmentioning

confidence: 99%

Organic N‐Type Molecule: Managing the Electronic States of Bulk Perovskite for High‐Performance Photovoltaics

Chen

Zhan

et al. 2020

Adv Funct Materials

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The power conversion efficiency (PCE) of planar p–i–n perovskite solar cells (pero‐SCs) is commonly lower than that of the n–i–p pero‐SCs, due to the severe nonradiative recombination stemming from the more p‐type perovskite with prevailing electron traps. Here, two n‐type organic molecules, DMBI‐2‐Th and DMBI‐2‐Th‐I, with hydrogen‐transfer properties for the doping of bulk perovskite aimed at regulating its electronic states are synthesized. The generated radicals in these n‐type dopants with high‐lying singly occupied molecular orbitals enable easy transfer of the thermally activated electrons to the MAPbI3 perovskite for the realization of n‐doped perovskites. The n‐doping degree could be further enhanced by using the iodine ionized dopant DMBI‐2‐Th‐I. The doping effect could reduce the electron trap density, increase the electron concentration of the bulk perovskite, and simultaneously improve the surface electronic contact. When the DMBI‐2‐Th‐I‐doped perovskite is used in planar p–i–n pero‐SCs, the nonradiative recombination is significantly suppressed. As a result, the photovoltaic performance improved significantly, as evidenced by an excellent PCE of 20.90% and a robust ambient stability even under high relative humidity. To the best of the knowledge, this work represents the first example where organic n‐type dopants are used to tune the electronic states of a bulk perovskite film for efficient planar p–i–n pero‐SCs.

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“…To date, doping metal ion is an effective strategy to reduce defects, which can improve efficiency and stability of PSCs [17]. For example, doping with monovalent metal cations (Cu + , Ag + or Li +) was applied to reduce trap-state density [18,19], improved perovskite crystallinity and film quality, thus enhanced performance of PSCs. By doping bivalent cations (Mn 2+ , Co 2+ or Zn 2+ ), tuned electronic band structures and crystalline morphology were received and improved the stability of PSCs [20][21][22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Perfection of Perovskite Grain Boundary Passivation by Rhodium Incorporation for Efficient and Stable Solar Cells

Liu

et al. 2020

Nano-Micro Lett.

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Organic cation and halide anion defects are omnipresent in the perovskite films, which will destroy perovskite electronic structure and downgrade the properties of devices. Defect passivation in halide perovskites is crucial to the application of solar cells. Herein, tiny amounts of trivalent rhodium ion incorporation can help the nucleation of perovskite grain and passivate the defects in the grain boundaries, which can improve efficiency and stability of perovskite solar cells. Through first-principle calculations, rhodium ion incorporation into the perovskite structure can induce ordered arrangement and tune bandgap. In experiment, rhodium ion incorporation with perovskite can contribute to preparing larger crystalline and uniform film, reducing trap-state density and enlarging charge carrier lifetime. After optimizing the content of 1% rhodium, the devices achieved an efficiency up to 20.71% without obvious hysteresis, from 19.09% of that pristine perovskite. In addition, the unencapsulated solar cells maintain 92% of its initial efficiency after 500 h in dry air. This work highlights the advantages of trivalent rhodium ion incorporation in the characteristics of perovskite solar cells, which will promote the future industrial application.

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N‐type Doping of Organic‐Inorganic Hybrid Perovskites Toward High‐Performance Photovoltaic Devices

Cited by 24 publications

References 54 publications

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO₂ Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO₂ Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

Organic N‐Type Molecule: Managing the Electronic States of Bulk Perovskite for High‐Performance Photovoltaics

Perfection of Perovskite Grain Boundary Passivation by Rhodium Incorporation for Efficient and Stable Solar Cells

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N‐type Doping of Organic‐Inorganic Hybrid Perovskites Toward High‐Performance Photovoltaic Devices

Cited by 24 publications

References 54 publications

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO2 Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO2 Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

Organic N‐Type Molecule: Managing the Electronic States of Bulk Perovskite for High‐Performance Photovoltaics

Perfection of Perovskite Grain Boundary Passivation by Rhodium Incorporation for Efficient and Stable Solar Cells

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Product

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Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO₂ Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells

Interface Engineering of Air‐Stable n‐Doping Fullerene‐Modified TiO₂ Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Cells