N-Type, Ion-Implanted Silicon Solar Cells and Modules

Meier, Daniel; Chandrasekaran, V.; Davis, Henry; Payne, Adam; Wang, Xiaoyan; Yelundur, Vijay; O'Neill, E.; Ok, Young-Woo; Zimbardi, Francesco; Rohatgi, A.

doi:10.1109/jphotov.2011.2169944

Cited by 31 publications

(9 citation statements)

References 20 publications

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“…This measurement reveals that the photovoltage generated with the ion implanted p + n-Si junction is 610 mV. This value is in good agreement with modern p + -emitter/n-base single crystalline Si photovoltaics 11 and confirms that the physical nanotexturing process, together with a subsequent etching and catalyst deposition process, does not introduce deleterious near-surface recombination centers. In order to elucidate the superior photoelectrochemical J−E performance for the nanotextured CoO x /p + n-Si device, cyclic voltammetry in the presence of a benchmark electrolyte composed of a ferri/ferrocyanide aqueous solution 6e was performed and compared to the planar device.…”

Section: * S Supporting Informationsupporting

confidence: 82%

Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces

et al. 2014

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Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p + n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm 2 at 1.23 V vs RHE, saturation current density of 30 mA/cm 2 , and photovoltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photoelectrodes by engineering the catalyst/semiconductor interface. A rtificial photosynthesis, by photoelectrochemical splitting of water into H 2 and O 2 , is a promising approach to renewable energy conversion.1 Critical challenges toward the realization of scalable devices include the availability of suitable semiconductors for capturing the solar spectrum, efficient coupling of catalysts with semiconductors, and stability under aqueous conditions. 2 Furthermore, avoiding explosive product mixtures and reducing efficiency losses due to gas crossover necessitate incorporation of membranes in current integrated systems. 2b,3 In the absence of recirculation, this imposes a requirement for operation under extreme pH conditions in order to eliminate pH gradients.3 Given the scarcity of acid-stable oxygen evolution reaction (OER) catalysts, 4 the development of efficient and stable photoanodes that operate in alkaline conditions is vital to achieve an efficient solar-to-fuel system.Silicon is an attractive semiconductor for solar fuel generation since it absorbs a significant fraction of the solar spectrum, is earth-abundant, and is widely used in photovoltaic applications.

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Section: * S Supporting Informationsupporting

confidence: 82%

Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces

et al. 2014

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“…Boron implantation to form the diffusion layer is the most advanced technology with the precise control of dopant. 5) The high efficiency up to 23.2% of the n-type with surface boron and rear phosphorus implantation is reported. 6) However, the implantation method has two issues.…”

Section: Introductionmentioning

confidence: 98%

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

Kurachi¹,

Yoshioka

2015

Jpn. J. Appl. Phys.

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An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

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“…Ion-implanted n-type silicon (Si) solar cells are attracting considerable interest in photovoltaics because of their potential for stabilized high efficiency and low cost. In addition, ion implantation can produce advanced highefficiency cell structures with fewer processing steps [1][2][3]. It is well known that n-type silicon provides several advantages over p-type, including better tolerance to common impurities (e.g., Fe), high bulk lifetime, and no light-induced degradation due to the boron-oxygen complex formation [4,5].…”

Section: Introductionmentioning

confidence: 99%

20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

Tao

Payne

Upadhyaya

et al. 2014

Progress in Photovoltaics

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In this work, we report on ion-implanted, high-efficiency n-type silicon solar cells fabricated on large area pseudosquare Czochralski wafers. The sputtering of aluminum (Al) via physical vapor deposition (PVD) in combination with a laserpatterned dielectric stack was used on the rear side to produce front junction cells with an implanted boron emitter and a phosphorus back surface field. Front and back surface passivation was achieved by thin thermally grown oxide during the implant anneal. Both front and back oxides were capped with SiN x , followed by screen-printed metal grid formation on the front side. An ultraviolet laser was used to selectively ablate the SiO 2 /SiN x passivation stack on the back to form the pattern for metal-Si contact. The laser pulse energy had to be optimized to fully open the SiO 2 /SiN x passivation layers, without inducing appreciable damage or defects on the surface of the n + back surface field layer. It was also found that a low temperature annealing for less than 3 min after PVD Al provided an excellent charge collecting contact on the back. In order to obtain high fill factor of~80%, an in situ plasma etching in an inert ambient prior to PVD was found to be essential for etching the native oxide formed in the rear vias during the front contact firing. Finally, through optimization of the size and pitch of the rear point contacts, an efficiency of 20.7% was achieved for the large area n-type passivated emitter, rear totally diffused cell.

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N-Type, Ion-Implanted Silicon Solar Cells and Modules

Cited by 31 publications

References 20 publications

Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces

Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces

Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

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