N-type porous silicon doping using phosphorous oxychloride (POCl₃)

Ultrasound treatment for porous silicon photoluminescence enhancement

“…The research towards a working electronic device based on PS focuses on contacts and passivation for the PS layer. Few passivation techniques have been introduced in the last years including high temperature oxidation [2], NF 3 anealing [3 -5] and mechanical coverage for sealing. These passivation techniques are based on the idea of keeping away the contaminants from the dangling bonds in the PS skeleton by means of not exposing the opening bonds to the surrounding gas.…”

Thermal Properties of Porous Silicon

“…Moreover, because the diffusion length of phosphorous atoms in silicon in the applied temperatures is much higher than the nanoporous crystalline size, all the volume of the porous silicon is expected to be diffused and doped uniformly. In addition, El-Bahar et al (2000) established that this process does not introduce damage to the porous skeleton. Kovalevskii et al (2004) have shown that the diffusion of arsenic or phosphorus from an RF plasma also is possible (see Figure 12.13).…”

“…Only Nishimura et al (1996), Sundaram et al (1997), Astrova et al (2000b), El-Bahar et al (2000), and Kovalevskii et al (2004) reported that doping by shallow impurities can be used for reduction of PSi layers resistance and influence on their photoluminescence properties. In particular, for these purposes Nishimura et al (1996) used Sb-doped silicate glass (SbSG) as a source of Sb during thermal diffusion.…”

“…SbSG was deposited onto a PSi layer by magnetron sputtering. El-Bahar et al (2000) modified properties of PSi layer by thermal diffusion of phosphorous, using a phosphorus liquid source of phosphorous oxychloride (POCl 3 ) doping technique. They have found that five orders of magnitude decrease in the resistivity of the porous layer took place after the thermal doping (T diff = 850°C), followed by an etching process to remove the oxide, which is formed during the diffusion and activation process (Table 12.3).…”

Influence of Atomic Hydrogen Treatment of a Si Substrate on the Formation of and the Light Emission from Porous Silicon

“…One method used to improve both the PL efficiency and stability is a passivation technique, which inactivates silicon dangling bonds in the PS skeleton. Various passivation techniques have been suggested, including high-temperature oxidation [3], metal plating [4][5][6], and thermal treatment [7]. On the other hand, many researchers [8,9] have shown that hydrogen also passivates Si dangling bond defects.…”