n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

Park, C.H.; Jeong, I. S.; Bae, Heesun; Kim, T.G.; Im, Seongil

doi:10.1016/j.nimb.2003.11.031

Cited by 10 publications

(5 citation statements)

References 15 publications

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“…The B dose for the device isolation was carefully determined according to our previous studies of ion-beaminduced n-type ZnO insulation. 13) Figure 1(a) shows the schematic cross-sections of our ZnO-TFTs implanted and isolated at 30 keV. The implanted ZnO showed a resistivity of more than $3 M cm.…”

Section: Methodsmentioning

confidence: 99%

“…10) The implantation for isolation has currently been applied to II-VI compound semiconductors using energetic B, O, and H ions to insulate semiconducting n-ZnO films, 11) but ZnO-based devices employing IBIisolation are still very rare. 12,13) In particular, any IBI isolation or patterning study for the fabrication of ZnO-TFT has not been reported, yet. In this study, we used ion-beaminduced isolation to fabricate high-quality UV-detecting ZnO-TFTs where the ZnO channel layer was deposited at an elevated temperature.…”

Section: Introductionmentioning

confidence: 99%

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Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation

Bae

Song

2008

jjap

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We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8 cm2/(V·s) and on/off current ratio of ∼104. Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100 MΩ resistor, a minimum response time of ∼5 ms under 364 nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation

Bae

Song

2008

jjap

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“…Among these, the low cost of the Si substrate renders the integrated circuit to be less expensive. However, the p-Si/n-ZnO HPDs have the drawback of high visible response due to the absorption of the thick Si substrate, yielding a poor ultraviolet-to-visible rejection ratio. , It was reported that in p-Si/n-ZnO HPDs, the visible response is higher than the UV response, and they have a low rectification ratio. , …”

Section: Introductionmentioning

confidence: 99%

“…13,23 It was reported that in p-Si/n-ZnO HPDs, the visible response is higher than the UV response, and they have a low rectification ratio. 21,24 NiO is a p-type transparent conductive oxide material with a direct wide bandgap of 3.0 to 4.0 eV. It exhibits excellent optical and electrical properties and chemical stability 25,26 and has been introduced into solar cells, 27 perovskite solar cells, 28 light-emitting diodes, 29,30 and UV photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of UV Response and Suppression of Visible Response of p-Si/n-ZnO Heterojunction Photodiodes via NiO and MgO Insertion Layers

Hwang

Liao

2020

J. Phys. Chem. C

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Nickel oxide (NiO) and magnesium oxide (MgO) thin films were inserted into p-Si/n-ZnO heterojunction photodiodes (HPDs), and their mechanisms in enhancing ultraviolet (UV) response and suppressing visible response were studied. The insertion of the MgO layer greatly reduced the leakage current of the HPDs due to the passivation of surface states in ZnO and hence enhanced the rectification ratio from 258.7 to 3769.2 by 14.6-times. HPDs with the NiO layer exhibited the highest UV response and photocurrent for all HPDs because NiO absorbs UV light. HPDs with the MgO layer demonstrated the least visible response and dark current. Among all of the HPDs, those with the NiO layer exhibited the largest UV-to-visible rejection ratio, while those with the MgO layer had the highest photo-to-dark current ratio and detectivity. The UV-to-visible rejection ratio was greatly enhanced from 101.1 to 652.3 by 6.4-times after the insertion of the NiO layer, and the photo-to-dark current ratio was enhanced from 3.3 × 102 to 4.5 × 104, by 136.4-times, after the insertion of the MgO layer. The HPDs with NiO insertion layer presented the fastest transient response, and those with MgO insertion revealed the slowest transient response due to the carrier trapping. Related mechanism for the improvements was elucidated by the band diagram.

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“…In recent years there has been increased an interest to ZnO-based photodiodes with the n-ZnO/p-Si heterojunction used as a photosensitive element [1][2][3][4][5]. In such photodiodes, the responsivity 0.28 A/W was achieved at 670 nm that corresponds to the quantum efficiency about 0.5 [3,5] while in Ref.…”

Section: Introductionmentioning

confidence: 99%

Detector with High Internal Photocurrent Gain Based on ZnO:N

et al. 2011

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The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.

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n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

Cited by 10 publications

References 15 publications

Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation

Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation

Enhancement of UV Response and Suppression of Visible Response of p-Si/n-ZnO Heterojunction Photodiodes via NiO and MgO Insertion Layers

Detector with High Internal Photocurrent Gain Based on ZnO:N

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