Nano and micro Hall-effect sensors for room-temperature scanning hall probe microscopy

Sandhu, Adarsh

doi:10.1016/j.mee.2004.03.029

Cited by 17 publications

(13 citation statements)

References 8 publications

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“…[4][5][6][7][8][9] The ordinary Hall effect is due to the Lorentz force acting on charge carriers in metals, semi-metals, and semiconductors.…”

mentioning

confidence: 99%

“…[1][2][3][4] Hall effect devices are emerging as one of the most suitable solutions. [4][5][6][7][8][9] The ordinary Hall effect is due to the Lorentz force acting on charge carriers in metals, semi-metals, and semiconductors. 5 Magnetic materials show additional "Hall phenomena" which are, generally speaking, generated by spin-orbit interactions: the so-called extraordinary [10][11][12][13][14][15][16] and planar Hall effects.…”

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confidence: 99%

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Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

et al. 2005

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Hall devices having an active area of about ͑500 nm͒ 2 are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V / AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 T/Hz 1/2 at frequencies above 1 kHz. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.1856134͔Magnetic sensors having submicrometer spatial resolution are key elements in several fundamental studies as well as industrial applications.1-4 Hall effect devices are emerging as one of the most suitable solutions. [4][5][6][7][8][9] The ordinary Hall effect is due to the Lorentz force acting on charge carriers in metals, semi-metals, and semiconductors.5 Magnetic materials show additional "Hall phenomena" which are, generally speaking, generated by spin-orbit interactions: the so-called extraordinary [10][11][12][13][14][15][16] and planar Hall effects. 17-20The local deposition of materials using a focused electron beam in the presence of a volatile precursor is a wellestablished technique for the maskless fabrication of submicrometer structures such as functionalized tips for scanning probe microscopy, 21-26 electrodes for local conductivity measurements, 27 solder bonds for carbon nanotubes studies, 28 nanowires, 29-33 and nanodots. 34 In this letter we demonstrate the possibility to grow highly sensitive cobaltcarbon submicrometer Hall devices by means of a focused electron beam. This flexible "single-step" process represents an alternative to the conventional "multisteps" methods, which are usually based on a combination of optical ͑or electron beam͒ lithography and focused ion beam milling. The realized devices show a strong extraordinary Hall effect, whereas the ordinary and planar Hall effects ͑in most of the devices͒ are relatively small.

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“…[4][5][6][7][8][9] The ordinary Hall effect is due to the Lorentz force acting on charge carriers in metals, semi-metals, and semiconductors.…”

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confidence: 99%

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confidence: 99%

Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

et al. 2005

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“…The fabrication process involved ͑1͒ formation of the active "cross" area using a combination of photolithography and wet chemical etching; ͑2͒ deposition of AuGe Ohmic contacts by vacuum evaporation as described before; 8 and ͑3͒ thermal annealing in a nitrogen atmosphere at 600 K for 3 min.…”

Section: Methodsmentioning

confidence: 99%

High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures

Bando¹,

Ohashi²,

Dede³

et al. 2009

Journal of Applied Physics

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Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive properties of micro-Hall devices fabricated using InAlSb/InAsSb/InAlSb heterostructures where electrical conduction was confined to a 30 nm-InAsSb two-dimensional electron gas layer. The 300 K electron mobility and sheet carrier concentration were 36 500 cm2 V-1 s-1 and 2.5× 1011 cm-2, respectively. The maximum current-related sensitivity was 2 750 V A-1 T-1, which was about an order of magnitude greater than AlGaAs/InGaAs pseudomorphic heterostructures devices. Photolithography was used to fabricate 1 μm×1 μm Hall probes, which were installed into a scanning Hall probe microscope and used to image the surface of a hard disk. © 2009 American Institute of Physics

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“…These methods use a SQUID (scanning superconductivity quantum interface device) 4,5,6 , an SMRM (scanning magnetoresistance microscope) 7,8 or an SHPM (scanning Hall probe microscope) 9,10,11,12,13,14 . Recently Mori et al 15 used Hall probe to study stress fields.…”

Section: Introductionmentioning

confidence: 99%

Changes in magnetic flux density around fatigue crack tips of carbon tool steels

et al. 2009

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Fatigue failure of steel occurs when small cracks form in a component and then continue to grow to a size large enough to cause failure. In order to understand the strength of steel components it is important to find the cracks which eventually grow to cause failures. However, at present, it is not easy to distinguish, in the early stages of growth, the cracks which will grow fast and cause failure. We hypothesized that it may be possible to distinguish them by comparing changes in the magnetic flux density around the tips of those cracks that grew large enough to cause failure. In order to measure these changes in magnetic flux density, we developed a scanning Hall probe microscope and observed the fatigue cracks growing from artificial slits in carbon tool steels (JIS SKS93). We also compared the changes in magnetic flux density around crack tips which grew under different loads and found that there is a strong correlation between the magnetic flux density, crack growth and stress intensity factors. In order to understand this relation, we measured the changes in the magnetic flux density and residual tensile stress by using an X-ray system, and found that the magnetic flux density changes not only in the plastic deformation area but also in the area of elastic stress field with increased stress.

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Nano and micro Hall-effect sensors for room-temperature scanning hall probe microscopy

Cited by 17 publications

References 8 publications

Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures

Changes in magnetic flux density around fatigue crack tips of carbon tool steels

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