Nano‐beam electron diffraction evaluation of strain behaviour in nano‐scale patterned strained silicon‐on‐insulator

Hähnel, Angelika; Reiche, M.; Moutanabbir, Oussama; Blumtritt, H.; Geisler, H.; Hoentschel, J.; Engelmann, Hans‐Jürgen

doi:10.1002/pssc.201084007

Cited by 7 publications

(6 citation statements)

References 14 publications

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“…NBED is used extensively in the semi-conductor industry and allows lattice strains to be measured to an accuracy of >1 Â 10 À3 by illuminating a nanometer sized-area with a near-parallel beam and comparing the resultant diffraction pattern with a strain-free reference [14,15].…”

Section: Introductionmentioning

confidence: 99%

Evaluating zirconium–zirconium hydride interfacial strains by nano-beam electron diffraction

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Korinek

Daymond

2013

Journal of Nuclear Materials

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Section: Introductionmentioning

confidence: 99%

Evaluating zirconium–zirconium hydride interfacial strains by nano-beam electron diffraction

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Korinek

Daymond

2013

Journal of Nuclear Materials

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“…Very often it requires a careful statistical interpretation of the data. 13 More importantly, it is still a 1D profiling technique. Acquiring strain maps requires the treatment of very large data sets which can be very time consuming.…”

mentioning

confidence: 99%

The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains

Denneulin

Cooper

Hartmann

2012

Journal of Applied Physics

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Articles you may be interested inImpact of SiGe source/drain induced-compressive strain on low frequency noise in high-k/metal gate p-channel metal-oxide-semiconductor transistors SiN contact etch stop layers (CESL) and recessed SiGe sources/drains are two uniaxial strain techniques used to boost the charge carriers mobility in p-type metal oxide semiconductor field effect transistors (pMOSFETs). It has already been shown that the electrical performances of the devices can be increased by combining both of these techniques on the same transistor. However, there are few experimental investigations of their additivity from the strain point of view. Here, spatially resolved strain mapping was performed using dark-field electron holography (DFEH) on pMOSFETs transistors strained by SiN CESL and embedded SiGe sources/drains. The influence of both processes on the strain distribution has been investigated independently before the combination was tested. This study was first performed with non-silicided devices. The results indicated that in the channel region, the strain induced by the combination of both processes is equal to the sum of the individual components. Then, the same investigation was performed after Ni-silicidation of the devices. It was found that in spite of a slight reduction of the strain due to the silicidation, the strain additivity is approximately preserved. Finally, it was also shown that DFEH can be a useful technique to characterize the strain field around dislocations. V C 2012 American Institute of Physics. [http://dx.

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“…Besides UV Raman spectroscopy, To quantify the strain in the strained layer, nanobeam electron diffraction (NBED) and peak-pairs analysis of high-angle annular dark field (HAADF) images were additionally performed using a probe C s -corrected FEI-Titan 80-300 microscope, and were correlated with results from Raman spectroscopy [16]. The NBED principle consists in illuminating a nanometer-sized area of the specimen with a nearly parallel electron beam and acquiring series of diffraction patterns at points along previously defined lines.…”

Section: Simentioning

confidence: 99%

Strain Stability in Nanoscale Patterned Strained Silicon-On-Insulator

Moutanabbir¹,

Reiche²,

Hähnel³

et al. 2010

ECS Trans.

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Nowadays, strain engineering plays a key role in boosting the performance of Si-based nanoelectronics. So far a tremendous progress has been made in establishing methods for strain manipulation in Si nanodevices. This has brought up further challenges in terms of development of reliable probes to characterize the strain on the nanoscale. In this paper, we discuss strain imaging using multi-wavelength micro-Raman spectroscopy. As a model system, we investigate the strain behavior upon nanoscale patterning of ultrathin strained silicon-on-insulator (SSOI). We show that valuable details on the strain depth distribution can be obtained by combining deep UV and visible Raman microprobes. Additionally, we also demonstrate that strain mapping with high lateral resolution can be achieved using UV-Raman with glycerin-immersed high numerical aperture objective lens. Results from nano-beam electron diffraction and peak-pairs analysis of high-angle annular dark field images are also presented. Detailed 3D finite element simulations of edge-induced strain relaxation in SSOI nanostructures augment our experimental studies.

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Nano‐beam electron diffraction evaluation of strain behaviour in nano‐scale patterned strained silicon‐on‐insulator

Cited by 7 publications

References 14 publications

Evaluating zirconium–zirconium hydride interfacial strains by nano-beam electron diffraction

Evaluating zirconium–zirconium hydride interfacial strains by nano-beam electron diffraction

The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains

Strain Stability in Nanoscale Patterned Strained Silicon-On-Insulator

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