Nano-cluster formation in Ge+Sn implanted SiO2 layers

Гайдук, П. И.; Prokoph’ev, S.L.; Kazuchits, N.M.; Плебанович, В. И.; Wesch, W.; Larsen, A. Nylandsted

doi:10.1016/j.nimb.2006.12.116

Cited by 1 publication

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“…On elevating the annealing temperature, the absorption related to the Si-O-Si bending mode (around 800 cm −1 ) becomes stronger while the Si-O rocking mode located at 460 cm −1 shifts a little toward the high energy side, which is also interpreted to be the effect of condensation and compaction of the SiO 2 framework. The peak centered at around 1100 cm −1 is attributed to the AS1-TO mode of Si-O-Si [12], which is magnified in figure 2 It is supposed that only In 2 O 3 clusters are formed in this situation [14,15]. As the temperature increases to 900 • C, the XRD intensity increases and the (012) diffraction peak appears.…”

Section: Resultsmentioning

confidence: 92%

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Preparation and luminescence of nano-sized In₂O₃and rare-earth co-doped SiO₂thin films

Wan

Lin

et al. 2008

Nanotechnology

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The sol-gel method was used to prepare SiO(2) thin films co-doped with In(2)O(3) nano-particles and Eu(3+). The formation of nano-sized In(2)O(3) particles after annealing at 900 °C was confirmed by the x-ray diffraction technique. A novel phase transition from a hexagonal rhombic centered to a body centered cubic structure of In(2)O(3) nano-particles was observed at around 1100 °C. It is found that the particle size and the particle density of In(2)O(3) can be tuned by changing the annealing temperature and the indium doping concentration, respectively. The characteristic emission bands from Eu(3+) ions can be observed at room temperature and the luminescence intensity is increased 20 times by introducing In(2)O(3) nano-particles into Eu(3+)-doped silica films. The integrated luminescence intensity was gradually enhanced by increasing the In(3+) concentration, suggesting effective energy transfer from nano-sized In(2)O(3) to Eu(3+) ions.

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Section: Resultsmentioning

confidence: 92%

“…It is difficult and inappropriate to estimate the particle size through the XRD peaks due to its low XRD intensity. It is supposed that only In 2 O 3 clusters are formed in this situation [14,15]. As the temperature increases to 900 • C, the XRD intensity increases and the (012) diffraction peak appears.…”

Section: Resultsmentioning

confidence: 99%

Preparation and luminescence of nano-sized In₂O₃and rare-earth co-doped SiO₂thin films

Wan

Lin

et al. 2008

Nanotechnology

View full text Add to dashboard Cite

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Nano-cluster formation in Ge+Sn implanted SiO2 layers

Cited by 1 publication

References 13 publications

Preparation and luminescence of nano-sized In₂O₃and rare-earth co-doped SiO₂thin films

Preparation and luminescence of nano-sized In₂O₃and rare-earth co-doped SiO₂thin films

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Nano-cluster formation in Ge+Sn implanted SiO2 layers

Cited by 1 publication

References 13 publications

Preparation and luminescence of nano-sized In2O3and rare-earth co-doped SiO2thin films

Preparation and luminescence of nano-sized In2O3and rare-earth co-doped SiO2thin films

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Preparation and luminescence of nano-sized In₂O₃and rare-earth co-doped SiO₂thin films

Preparation and luminescence of nano-sized In₂O₃and rare-earth co-doped SiO₂thin films