Nano Device Simulator—A Practical Subband-BTE Solver for Path-Finding and DTCO

Stanojević, Z.; Tsai, Chen-Ming; Strof, G.; Mitterbauer, F.; Baumgärtner, O.; Kernstock, C.; Karner, M.

doi:10.1109/ted.2021.3079884

Cited by 18 publications

(2 citation statements)

References 21 publications

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“…However, the tunneling current is accurately included as nonlocal intravalley interaction based on the WKB tunneling model. 41 This allows for the accurate consideration of the source-induced injection barrier. In bilayer modeling, another challenge is calculating the current path correctly.…”

Section: Tcad Simulationmentioning

confidence: 99%

Gate structuring on bilayer transition metal dichalcogenides enables ultrahigh current density

Kim,

Kwon,

Kim

et al. 2024

Preprint

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The foundry industry and academia dedicated to advancing logic transistors are encountering significant challenges in extending Moore's Law. In the industry, silicon (Si)-based transistors are currently adopting gate-all-around (GAA) structures and reducing channel thickness, even at the cost of decreased mobility, for maximizing gate controllability. To compensate for the reduced mobility, multi-channel structures are essential, making the fabrication process extremely challenging. Meanwhile, two-dimensional (2D) semiconductors are emerging as strong alternatives for the channel material in logic transistors, thanks to their ability to maintain crystallinity even when extremely thin. In the case of 2D semiconductors, introducing a dual gate structure, which has a much lower fabrication complexity, can achieve effects similar to GAA. Through this research, we have identified the fringing field originating from the common structure of elevated top contact in 2D FETs results in a high charge injection barrier. Through simulation and statistical analysis with large-area FET arrays, we confirmed that introducing a dual-gate structure in bilayer MoS2 FETs effectively compensates for the fringing field. We have confirmed that this leads to a significant boost in on-current. Remarkably, even with conventional contacts and polycrystalline materials, we observed a record-high on-current of 1.55 mA/µm. Additional circuit simulations have confirmed the potential for dual gate bilayer FETs to surpass the performance of Si GAAFETs when possessing a gate length of 5 nm, achievable only with 2D materials. Therefore, here we propose that by using 2D materials, we can focus on extreme gate length scaling and monolithic 3D integration rather than the challenging GAA process for extending Moore’s Law.

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Section: Tcad Simulationmentioning

confidence: 99%

Gate structuring on bilayer transition metal dichalcogenides enables ultrahigh current density

Kim,

Kwon,

Kim

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

“…Even so, BTE is still widely used because it can effectively include important scattering mechanisms such as phonon, surface roughness, Coulomb, and plasmon scattering [19]- [22]. Although BTE has the limitation of not being able to consider quantum mechanical phenomena in the transport direction, recent studies have looked at using the WKB approximation to effectively account for the source-drain tunneling effect in BTE.…”

mentioning

confidence: 99%

A deterministic Wigner transport equation solver with infinite correlation length

Kim

2023

J Comput Electron

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We propose a new formulation of the Wigner transport equation (WTE) with infinite correlation length. Since the maximum correlation length is not limited to a finite value, there is no uncertainty in the simulation results owing to the finite integral range of the nonlocal potential term. For general and efficient simulation, the proposed WTE formulation is solved self-consistently with the Poisson equation through the finite volume method and the fully coupled Newton-Raphson scheme. Through this, we implemented a quantum transport steady state and transient simulator with excellent convergence.

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Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

et al. 2022

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We discuss the numerical aspects of the Boltzmann transport equation (BE) for electrons in semiconductor devices, which is stabilized by Godunov’s scheme. The k-space is discretized with a grid based on the total energy to suppress spurious diffusion in the stationary case. Band structures of arbitrary shape can be handled. In the stationary case, the discrete BE yields always nonnegative distribution functions and the corresponding system matrix has only eigenvalues with positive real parts (diagonally dominant matrix) resulting in an excellent numerical stability. In the transient case, this property yields an upper limit for the time step ensuring the stability of the CPU-efficient forward Euler scheme and a positive distribution function. Similar to the Monte-Carlo (MC) method, the discrete BE can be solved in time together with the Poisson equation (PE), where the time steps for the PE are split into shorter time steps for the BE, which can be performed at minor additional computational cost. Thus, similar to the MC method, the transient approach is matrix-free and the solution of memory and CPU intensive large systems of linear equations is avoided. The numerical properties of the approach are demonstrated for a silicon nanowire NMOSFET, for which the stationary I–V characteristics, small-signal admittance parameters and the switching behavior are simulated with and without strong scattering. The spurious damping introduced by Godunov’s (upwind) scheme is found to be negligible in the technically relevant frequency range. The inherent asymmetry of the upwind scheme results in an error for very strong scattering that can be alleviated by a finer grid in transport direction.

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Nano Device Simulator—A Practical Subband-BTE Solver for Path-Finding and DTCO

Cited by 18 publications

References 21 publications

Gate structuring on bilayer transition metal dichalcogenides enables ultrahigh current density

Gate structuring on bilayer transition metal dichalcogenides enables ultrahigh current density

A deterministic Wigner transport equation solver with infinite correlation length

Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

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