Nano-dimensional analysis for practical materials using the nano-beam SIMS apparatus

e-J. Surf. Sci. Nanotechnol.

2012

Shave-off profiling with nano-beam SIMS achieves the highly precise depth profiling with nanometer-scaled depth resolution by utilizing FIB micro-machining process to provide depth profile. This method has its own features: absolute depth scale, pin point depth profiling and application to rough surface and/or hetero interface. However, the discussion of the sputtering mechanism in shave-off profiling is still insufficient because shave-off scan mode has distinctive position of the primary ion beam against the sample. In this study, the sputtering yield and the mixing effects within the primary ion dose amount of up to 1.0×10 16 ions/cm 2 under shave-off condition were investigated using molecular dynamics simulations. These results were compared with those of under conventional raster scan mode. In addition, the ejected region of sputtered atoms was investigated. As a result, it was proved that shave-off scan mode has high sputtering yield and low mixing effects. Moreover, the relationship between the sputtering phenomenon and the atomic displacement under shave-off scan mode was demonstrated.

Section: Shave-off Profilingmentioning

confidence: 99%

Molecular Dynamics Simulations for Shave-Off Profiling

e-J. Surf. Sci. Nanotechnol.

2012

“…Shave‐off profiling with nano‐beam SIMS has been developed for nano‐dimensional analysis . Primary ions of this apparatus are field‐emitted Ga + FIB (Ga‐FIB) with 30 keV accelerated energy and approximately 35 pA beam current.…”

Section: Shave‐off Depth Profilingmentioning

confidence: 99%

Study on the fundamental predominance in shave‐off depth profiling

Surface & Interface Analysis

2012

Self Cite

Shave-off depth profiling achieves the highly precise depth profiling with nanometre-scaled depth resolution by using a focused ion beam micro-machining process to provide depth profile. This method has its own features: absolute depth scale, pinpoint depth profiling and application for rough surface and/or hetero interface. Although this method has significant features, the quantitative evaluation of the fundamental predominance in shave-off depth profiling is still insufficient because the shave-off scanning mode has a distinctive position of the primary ion beam against the sample. In this study, the sputtering yield and the mixing effects under the shave-off scan mode were investigated using molecular dynamics simulation. The obtained sputtering yields under the shave-off and the raster modes accorded well with experimental results. The results of sputtering yields and root mean square displacement suggested that the shave-off scan mode has a high sputtering yield and low mixing effects compared with the raster scan mode. In addition, the distribution of the marker atoms clearly showed the process of mixing.

“…Shave-off profiling with nano-beam SIMS has been developed for nano-dimensional analysis [9]. Primary ions of this apparatus are field-emitted Ga + Focused Ion Beam (Ga-FIB) with 30 keV accelerated energy and about 35 pA beam current.…”

Section: B Shave-off Profilingmentioning

confidence: 99%

Study on Sputtering Mechanism of Shave-off Profiling

Nojima

e-J. Surf. Sci. Nanotechnol.

2011

Shave-off profiling with nano-beam SIMS achieves the highly precise depth profiling with nanometer-scaled depth resolution by utilizing FIB micro-machining process to provide depth profile. This method is very unique depth profiling for acquiring a depth profile by shave-off scanning mode (A fast horizontal sweep of FIB is combined with the very slow vertical sweep). Shave-off profiling has its own features; absolute depth scale, pin point depth profiling and application for rough surface and/or hetero interface. However, the discussion of the sputtering mechanism in shave-off profiling is still insufficient because shave-off scanning mode has distinctive position of the primary ion beam against the sample. In this study, we discussed the difference of sputtering mechanism between shave-off scan and conventional raster scan from the view point of sputtered atom yields of experimental results and calculation results. In addition, the molecular dynamics (MD) simulation under shave-off condition is improved in order to visualize the sputtering mechanism of shave-off profiling. As a result, 'shave-off sputtered atom yield' is rather high compared to conventional sputtered atom yield according to distinctive sputtering mechanism of shave-off scanning mode.