2021
DOI: 10.1016/j.commatsci.2021.110837
|View full text |Cite
|
Sign up to set email alerts
|

Nano material removal mechanism of 4H-SiC in ion implantation-assisted machining

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 15 publications
(3 citation statements)
references
References 69 publications
0
3
0
Order By: Relevance
“…43 In the nano-cutting model, the variation of cutting force can be used to characterize the inter-atomic structure transformation in the machining progression, and it can be used to predict the tool wear instantly. 44 Figure 3 shows the variation of tangential force and normal force as a function of cutting distance and average cutting force predicted by various models. Tangential force and normal force both increase after 2 nm because the tool has not made contact with the workpiece before 2 nm.…”
Section: Resultsmentioning
confidence: 99%
“…43 In the nano-cutting model, the variation of cutting force can be used to characterize the inter-atomic structure transformation in the machining progression, and it can be used to predict the tool wear instantly. 44 Figure 3 shows the variation of tangential force and normal force as a function of cutting distance and average cutting force predicted by various models. Tangential force and normal force both increase after 2 nm because the tool has not made contact with the workpiece before 2 nm.…”
Section: Resultsmentioning
confidence: 99%
“…In the studies of metal ion implantation, Fan et al [44] studied the effects of the Ga ion implantation dose on the polishing effects of 4H-SiC. There are also studies on the synergistic implantation of metal ions and H ions.…”
Section: Simulation Studies Of Sic Ion Implantationmentioning
confidence: 99%
“…In addition, the temperature rising rate, minimum DOC and material removal rate can also be increased by ion implantation [164]. Furthermore, the increase of ion implantation dose is proposed to effectively form a uniform modified thick layer with promoted machinability and suppressed tool wear [165]. Even in brittle-mode cutting, crack propagation is blocked at the interface between crystalline layer and amorphous layer, and there is no subsurface damage extending into the crystalline layer of single crystal 6H-SiC.…”
Section: Ion Implantation-assisted Diamond Cuttingmentioning
confidence: 99%