Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Abstract

Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.

Studies on the Aging Characteristics of Base Oil with Amine Based Antioxidant in Steel-on-Steel Lubricated Sliding

“…The C 1s detailed spectrum is fitted into four components at 285 ± 0.1, 286.5 ± 0.1, 288.2 ± 0.1, and 289.2 ± 0.1 eV (Figure a). The signal at 285 eV of large intensity corresponds to C–H or C–C of an organic molecule. − The peaks at 286.5, 288.2, and 289.2 eV are assigned to C–O, CO, and OCO bonds, respectively. − …”

Effects of vacancy defects on the mechanical properties in neutron irradiated Czochralski silicon

“…As we know, a number of studies have investigated the impacts of external impurities on the mechanical strength of CZ silicon [12][13][14][15][16]. Chen et al [13] have reported that germanium doping can block the mobilization of dislocations in CZ silicon, since the germanium-related complexes facilitate the generation of small and high density oxygen precipitates.…”

“…Yang et al [14,15] have reported that nitrogen doping can increase the activation energy of the dislocation motion, thus enhances the mechanical strength of CZ silicon. In addition, other impurities such as carbon and nickel have been implanted into silicon to improve the mechanical strength of silicon due to the increased bond energy between the impurities and silicon atoms [16].…”

Nanoscale triboactivity of functionalized c-Si surfaces by Fe+ion implantation

“…Nakano et al [9,10] showed that ion implantation processes combined with substrate etching can be used to build MEMS. Thus, implantation of Si with different ions has been widely used as a modifying tool for the surface properties, and different authors have reported results on the implantation of Si with Cr [11], C [12][13][14], N [12,13], Ne [14,15] and Ar [14,16], among other elements. However, more research is needed to prove that the ion implantation process can be used as a solution for the contact-based operation MEMS devices.…”