Nano-optical single-photon response mapping of waveguide integrated molybdenum silicide (MoSi) superconducting nanowires

Li, Jian; Kirkwood, Robert A.; Baker, Luke J.; Bosworth, David A.; Erotokritou, Kleanthis; Banerjee, Archan; Heath, Robert M.; Natarajan, Chandra M.; Barber, Z. H.; Sorel, Marc; Hadfield, Robert H.

doi:10.1364/oe.24.013931

Cited by 36 publications

(19 citation statements)

References 34 publications

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“…Due to their amorphous microstructure, devices fabricated from these materials appear to suffer from fewer constrictions. SNSPDs made from either of these materials have shown excellent detection performance in the near infrared 15,16 .…”

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confidence: 99%

Large-area microwire MoSi single-photon detectors at 1550 nm wavelength

Charaev

Morimoto

Dane

et al. 2020

Applied Physics Letters

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We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 µm, and active areas up to 400 by 400 µm 2 . Despite hairpin turns and a large number of squares (up to 10 4 ) in the device, the dark count rate was measured to be ∼10 3 cps at 99% of the switching current. This value is about two orders of magnitude lower than results reported recently for short MoSi devices with shunt resistors. We also found that 5 nm thick MoSi detectors with the same geometry were insensitive to single near-infrared photons, which may be associated with different levels of suppression of the superconducting order parameter. However, our results obtained on 3 nm thick MoSi devices are in a good agreement with predictions in the frame of a kinetic-equation approach.

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confidence: 99%

Large-area microwire MoSi single-photon detectors at 1550 nm wavelength

Charaev

Morimoto

Dane

et al. 2020

Applied Physics Letters

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“…15 SNSPDs based on these materials currently have the highest reported detection efficiencies (93% for WSi 12 ), as well as a higher fabrication yield 16 than devices made of polycrystalline materials such as niobium nitride (NbN), 1 niobium titanium nitride (NbTiN) 17 and tantalum nitride (TaN). 18 MoSi SNSPDs tailored to specific advanced photon counting applications have recently been reported, including integration on an optical waveguide, 19 UV single-photon detection 20 and integrated ion trapping. 21 One striking difference with polycrystalline materials is that amorphous SNSPDs have a detection efficiency that saturates at bias currents well below the critical current.…”

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confidence: 99%

Optically probing the detection mechanism in a molybdenum silicide superconducting nanowire single-photon detector

Caloz

Korzh

Timoney

et al. 2017

Applied Physics Letters

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We experimentally investigate the detection mechanism in a meandered molybdenum silicide (MoSi) superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750 to 2050 nm. Contrary to some previous observations on niobium nitride (NbN) or tungsten silicide (WSi) detectors, we find that the energycurrent relation is nonlinear in this range. Furthermore, thanks to the presence of a saturated detection efficiency over the whole range of wavelengths, we precisely quantify the shape of the curves. This allows a detailed study of their features, which are indicative of both Fano fluctuations and position-dependent effects.

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“…The voltage pulse is further filtered and amplified, and discriminated as a photon detection event. [154,155] A range of superconducting materials have been developed for SNSPD on silicon substrate, including niobium nitride, [156,157] niobium-titanium-nitride, [158,159] tungsten silicide, [160] and molybdenum silicide, [161] boosting hybrid integration with reconfigurable photonic circuits, [159,162] which not only bridge different high-quality building blocks, but also enable configurable linear optical operations required by QIP. Recent experimental work on molybdenum silicide SNSPD has shown >98% detection efficiency at a wavelength of 1550 nm by optimizing the design and fabrication of an all-dielectric layered stack and fiber coupling package.…”

Section: Single Photon Detectormentioning

confidence: 99%

Advances in Chip‐Scale Quantum Photonic Technologies

Zheng

et al. 2021

Adv Quantum Tech

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Quantum photonic system has made remarkable achievements in computing and communication. Serving as quantum information carriers, photons are flying qubits and robust against decoherence, emerging as a desirable platform to make quantum processor a reality. However, with system's complexity and functionality scaling up, the requirements for stability, programmability, and manufacturability will be in high demand. Integrated photonics, compatible with complementary metal-oxide-semiconductor fabrication, has overwhelming dominance in terms of density and performance, making it an unrivaled contender for large-scale quantum information processing (QIP). To improve the performance of individual blocks and integrate them on a common substrate is one of the core tasks for a practical quantum processor. Here, the recent advances in components that constitute quantum photonic systems on silicon photonics platform, including sources, modulators, and detectors are reviewed. Burgeoning quantum photonics applications, such as multi-dimensional, multi-photon QIP and integrated quantum key distribution are highlighted.

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Nano-optical single-photon response mapping of waveguide integrated molybdenum silicide (MoSi) superconducting nanowires

Cited by 36 publications

References 34 publications

Large-area microwire MoSi single-photon detectors at 1550 nm wavelength

Large-area microwire MoSi single-photon detectors at 1550 nm wavelength

Optically probing the detection mechanism in a molybdenum silicide superconducting nanowire single-photon detector

Advances in Chip‐Scale Quantum Photonic Technologies

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